|
AFF26] C. Hernandez, F. Terki, S. Charar, J. Sadowski and D. Maude
Semiconducteurs magnétiques (III-V) la course vers la plus haute température de Curie Tc ?
Ecole thématique CNRS, GDR Sesame Le spin dans les SC Physique et applications, La Grande Motte, 2-7 oct. 2005 (2005)
OS : Ouvrages scientifiques (ou chapitres de ces ouvrages) - Scientific books or chapters.
2008
[OS3] J. Cibert and D. Scalbert
Diluted Magnetic Semiconductors : Basic Physics and Optical Properties, pages 389, Mikhail I. Dyakonov, Springer, Springer Series in Solid-State Sciences, Spin Physics in Semiconductors, 2008
2005
[OS4] F. Zolla, G. Renversez, A. Nicolet, B. Kuhlmey, S. Guenneau and D. Felbacq
Foundations of Photonic Crystal Fibres, Imperial College Press, 2005
AP : Autres productions : thèses - Other productions : thesis.
2008
[AP8] K. Vynck
Propriétés optiques de matériaux diélectriques nanostructurés : des cristaux photoniques aux métamatériaux
Thèse d’Université 12/11/2008, Université Montpellier 2 (Co-directeurs de thèse : D. Cassagne et E. Centeno)
2007
[AP9] A. Cabuz
Métamatériaux électromagnétiques _ [des cristaux photoniques aux composites à indice négatif
Thèse d’Université 19/06/2007, Université Montpellier 2 (Directeur de thèse : D. Felbacq)
[AP10] A. Brunetti
Polariton spin beats and polariton fine structure in semiconductor microcavities
Thèse d’Université 23/05/2007, Université Montpellier 2 (Directeur de thèse : D. Scalbert)
[AP11] Y. Ould-Agha
Propagation de la lumière dans des fibres optiques torsadées
Thèse d’Université 09/2007, Université d’Aix-Marseille 3 (Co-directeurs de thèse : F. Zolla Institut Fresnel et D. Felbacq)
[AP12] R. Bardoux
Spectroscopie de boîtes quantiques individuelles GaN/AlN en phase hexagonale
Thèse d’Université 23/11/2007, Université Montpellier 2 (Directeur de thèse : P. Lefebvre)
2006
[AP13] C. Hernandez
Propriétés électriques, magnétiques et structurales de semiconducteurs ferromagnétiques à base de GaMnAs
Thèse d’Université 06/06/2006, Université Montpellier 2 (Direction de thèse : Dir S. Charar et Co-dir : F. Terki)
2005
[AP14] R. Intartaglia
Spectroscopie optique des arsénio-nitrures de type (Ga,In)(N,As) : effet de concentration sur film mince et puits quantiques
Thèse d’Université 15/12/2005, Université Montpellier 2 (Directeur de thèse : T. Taliercio)
| Equipe 3 : PRT (Physique et Recherche Technologique) |
ACL : Articles dans des revues internationales ou nationales avec comité de lecture répertoriées par l’AERES ou dans les bases de données internationales (ISI Web of Knowledge, Pub Med...)International or National peer-reviewed articles in journals referenced in international databases.
2009
[ACL152] A. Constant, N. Camara, P. Godignon and J. Camassel
Benefit of H2 surface pretreatment for 4H-SiC oxynitridation using N2O and rapid thermal processing steps
Applied Physics Letters 94(6), 063508 (3 pp.) (2009)
[ACL153] N. Combe, J. -R. Huntzinger and J. Morillo
Surface Loving and Surface Avoiding modes
European Physical Journal B 68, 47-58 (2009)
[ACL154] B. Jouault, W. Desrat, O. Couturaud, S. Contreras, D. Mailly, V. Mosser and W. Zawadski
Ballistic effects up to room temperature in microscopic Hall sensors
Journal of Applied Physics 105(7), 074504 (2009)
[ACL155] D. Brink, H. Peyre and J. Camassel
Quantitative analysis of the lattice reconstruction of ion-implanted SiC after visible light laser irradiation
Journal of Applied Physics 105(6), 12 (2009)
[ACL156] F. Hudert, A. Bruchhausen, D. Issenmann, O. Schecker, R. Waitz, A. Erbe, E. Scheer, T. Dekorsy, A. Mlayah and J. -R. Huntzinger
Confined longitudinal acoustic phonon modes in free-standing Si membranes coherently excited by femtosecond laser pulses
Physical Review B 79(20), R201307—4 (2009)
[ACL157] A. Tagliacozzo, F. Tafuri, E. Gambale, B. Jouault, D. Born, P. Lucignano, D. Stornaiuolo, F. Lombardi, A. Barone and B. Altshuler
Mesoscopic conductance fluctuations in YBa2Cu3O7−delta grain boundary junctions at low temperature
Physical Review B 79, 24501 (2009)
[ACL158] B. Jouault, M. Gryglas, M. Baj, A. Cavanna, U. Gennser, G. Faini and D. K. Maude
Spin filtering through a single impurity in a GaAs/AlAs/GaAs resonant tunneling device
Physical Review B 79(4), 041307(R) (2009)
2008
[ACL159] N. Camara, G. Rius, J. -R. Huntzinger, A. Tiberj, L. Magaud, N. Mestres, P. Godignon and J. Camassel
Early stage formation of graphene on the C face of 6H-SiC
Applied Physics Letters 93(26), 263102 (3 pp.) (2008)
[ACL160] L. Bouguen, S. Contreras, B. Jouault, L. Konczewicz, J. Camassel, Y. Cordier, M. Azize, S. Chenot and N. Baron
Investigation of AlGaN/AlN/GaN heterostructures for magnetic sensor application from liquid helium temperature to 300C
Applied Physics Letters 92(4), 043504—1 (2008)
[ACL161] N. Camara, G. Rius, J. -R. Huntzinger, A. Tiberj, N. Mestres, P. Godignon and J. Camassel
Selective epitaxial growth of graphene on SiC
Applied Physics Letters 93(12), 123503 (3 pp.) (2008)
[ACL162] B. Jouault, L. Bouguen, S. Contreras, A. Kerlain and V. Mosser
Finite element modeling for temperature stabilization of gated Hall sensors
Journal of Applied Physics 104(5), 053705 (2008)
[ACL163] M. Stoehr, S. Juillaguet, M. Marshall and J. G. Wen
Quantum confinement effect of ZnO nanocrystallites embedded in In2O3 films
Journal of Applied Physics 104(8), 084906 (5 pp.) (2008)
[ACL164] M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet and H. Peyre
Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor
Journal of Crystal Growth 310(13), 3174—82 (2008)
[ACL165] F. Tafuri, A. Tagliacozzo, D. Born, D. Stornaiuolo, E. Gambale, D. Dalena, P. Lucignano, B. Jouault, F. Lombardi, A. Barone and B. L. Altshuler
Coherent quasiparticle transport in grain boundary junctions employing high-Tc superconductors
Microelectronics Journal 39(8), 1066—9 (2008)
[ACL166] J. Camassel and S. Juillaguet
Optical properties of as-grown and process-induced stacking faults in 4H-SiC
Physica Status Solidi (B) 245(7), 1337—55 (2008)
[ACL167] E. Litwin-Staszewska, L. Konczewicz, R. Piotrzkowski, L. Dmowski, R. Czernecki and P. Prystawko
Parallel conduction in p-type gallium nitride homo-structures
Semiconductor Science and Technology 23(9), 095007 (5 pp.) (2008)
2007
[ACL168] L. Thevenod, M. Casse, W. Desrat, M. Mouis, G. Reimbold, D. K. Maude and F. Boulanger
Magnetoresistance mobility extraction on TiN/HfO2/SiO2 metal-oxide-semiconductor field effect transistors
Applied Physics Letters 90(15), 152111—1 (2007)
[ACL169] S. Juillaguet, J. Camassel, M. Albrecht and T. Chassagne
Screening the built-in electric field in 4H silicon carbide stacking faults
Applied Physics Letters 90(11), 111902—1 (2007)
[ACL170] R. Lewandowska, J. L. Weyher, J. J. Kelly, L. Konczewicz and B. Lucznik
The influence of free-carrier concentration on the PEC etching of GaN : a calibration with Raman spectroscopy
Journal of Crystal Growth 307(2), 298—301 (2007)
[ACL171] J. Camassel and S. Juillaguet
Optical investigation methods for SiC device development : application to stacking faults diagnostic in active epitaxial layers
Journal of Physics D-Applied Physics 40(20), 6264-6277 (2007)
[ACL172] J. Camassel and P. Soukiassian
Sensors based on interfaces
Journal of Physics D-Applied Physics 40(23), E01 (2007)
[ACL173] S. Juillaguet, M. Albrecht, J. Camassel and T. Chassagne
Cathodoluminescence investigation of stacking faults extension in 4H-SiC
Physica Status Solidi A 204(7), 2222—8 (2007)
[ACL174] P. Lucignano, B. Jouault and A. Tagliacozzo
Far-infrared absorption of noncenter-of-mass modes and an optical sum rule in a few-electron quantum dot with rashba spin-orbit coupling
Physical Review B 75(15), 153310—1 (2007)
[ACL175] A. Mlayah, J. -R. Huntzinger and L. Nicolas
Raman-Brillouin light scattering in low-dimensional systems : Photoelastic model versus quantum model
Physical Review B, 245303 (2007)
[ACL176] B. Jouault, O. Couturaud, S. Bonifacie, D. Mailly and C. Chaubet
Landau levels analysis by using symmetry properties of mesoscopic Hall bars
Physical Review B 76(16), 161302—1 (2007)
[ACL177] W. Zawadzki, S. Bonifacie, S. Juillaguet, C. Chaubet, A. Raymond, Y. M. Meziani, M. Kubisa and K. Ryczko
Nonlinear dependence of the magnetophotoluminescence energies of asymmetric GaAs/Ga0.67Al0.33As quantum wells on an external magnetic field
Physical Review B 75(24), 245319—1 (2007)
[ACL178] N. Combe, J. -R. Huntzinger and A. Mlayah
Vibrations of quantum dots and light scattering properties : Atomistic versus continuous models
Physical Review B 76(20), 205425—1 (2007)
2006
[ACL179] J. Camassel, S. Juillaguet, M. Zielinski and C. Balloud
Application of LTPL investigation methods to CVD-grown SiC
Chemical Vapor Deposition 12(8-9), 549-556 (2006)
[ACL180] M. Soueidan, G. Ferro, B. Nsouli, M. Roumie, E. Polychroniadis, M. Kazan, S. Juillaguet, D. Chaussende, N. Habka, J. Stoemenos, J. Camassel and Y. Monteil
Characterization of a 3C-SiC single domain grown on 6H-SiC(0001) by a vapor-liquid-solid mechanism
Crystal Growth & Design 6(11), 2598-2602 (2006)
[ACL181] Removed from counts (double entry)
[ACL182] S. Bonifacie, C. Chaubet, B. Jouault and A. Raymond
Anharmonicity and asymmetry of Landau levels for a disordered two-dimensional electron gas
Physical Review B 74(24), 245303—1 (2006)
[ACL183] W. Desrat, D. K. Maude, Z. R. Wasilewski, R. Airey and G. Hill
Dresselhaus spin-orbit coupling in a symmetric (100) GaAs quantum well
Physical Review B 74(19), 193317—1 (2006)
[ACL184] A. Ferreira da Silva, J. Pernot, S. Contreras, B. E. Sernelius, C. Persson and J. Camassel
Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC
Physical Review B 74(24), 245201—1 (2006)
[ACL185] J. -R. Huntzinger, A. Mlayah, V. Paillard, A. Wellner, N. Combe and C. Bonafos
Electron-acoustic-phonon interaction and resonant Raman scattering in Ge quantum dots : Matrix and quantum confinement effects
Physical Review B 74(11), 115308—1 (2006)
[ACL186] B. Jouault, M. Gryglas, G. Faini, U. Gennser, A. Cavanna, M. Baj and D. K. Maude
Single-impurity tunneling spectroscopy to probe the discrete states of a two-dimensional electron gas in a quantizing magnetic field
Physical Review B 73(15), 155415—1 (2006)
2005
[ACL187] M. Zdrojek, T. Melin, C. Boyaval, D. Stievenard, B. Jouault, M. Wozniak, A. Huczko, W. Gebicki and L. Adamowicz
Charging and emission effects of multiwalled carbon nanotubes probed by electric force microscopy
Applied Physics Letters 86(21), 213114—1 (2005)
[ACL188] L. H. Dmowski, J. A. Plesiewicz, T. Suski, Hai Lu, W. Schaff, M. Kurouchi, Y. Nanishi, L. Konczewicz, V. Cimalla and O. Ambacher
Resonant localized donor state above the conduction band minimum in InN
Applied Physics Letters 86(26), 262105—1 (2005)
[ACL189] J. Pernot, S. Contreras and J. Camassel
Electrical transport properties of aluminum-implanted 4H-SiC
Journal of Applied Physics 98(2), 23706 (2005)
[ACL190] R. Al Asmar, J. Atanas, M. Ajataka, Y. Zaatar, G. Ferblantier, J. Sauvajol, J. Jabbour, S. Juillaguet and A. Foucaran
Characterization and Raman investigations on high-quality ZnO thin films fabricated by reactive electron beam evaporation technique
Journal of Crystal Growth 279(3-4), 394-402 (2005)
[ACL191] R. A. Asmar, S. Juillaguet, M. Ramonda, A. Giani, P. Combette, A. Khoury and A. Foucaran
Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique
Journal of Crystal Growth 275(3-4), 512—20 (2005)
[ACL192] W. Desrat, F. Giazotto, V. Pellegrini, M. Governale, F. Beltram, F. Capotondi, G. Biasiol and L. Sorba
Anticrossings of spin-split Landau levels in an InAs two-dimensional electron gas with spin-orbit coupling
Physical Review B 71(15), 153314—1 (2005)
[ACL193] V. A. Chitta, W. Desrat, D. K. Maude, B. A. Piot, N. F. Oliveira, P. H. O. Rappl, A. Y. Ueta and E. Abramof
Multivalley transport and the integer quantum Hall effect in a PbTe quantum well
Physical Review B 72(19), 195326—1 (2005)
[ACL194] P. Lucignano, B. Jouault, A. Tagliacozzo and B. L. Altshuler
Rashba control for the spin excitation of a fully spin-polarized vertical quantum dot
Physical Review B 71(12), 121310—1 (2005)
ACLN : Articles dans des revues avec comité de lecture non répertoriées dans des bases de données internationales International or National peer-reviewed articles in journals not referenced in international databases.
2007
[ACLN10] B. Chenaud and P. Valvin
Granularité laser et interférences de speckles
Bulletin de l’Union des Physiciens 101(899(1)), 1101-1121 (2007)
INV : Conférences données à l’invitation du Comité d’organisation dans un congrès national ou international _ [Invited talks in International or National conferences.
2009
[INV25] S. Juillaguet, T. Robert and J. Camassel
Optical investigations techniques used for stacking faults characterization in SiC
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC ’09), 2009, Catane, Italie (2009)
[INV26] N. Camara, G. Rius, J. -R. Huntzinger, A. Tiberj, N. Mestres, F. Pérez Murano, P. Godignon and J. Camassel
Very large monolayer graphene ribbons grown on SiC
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC ’09), 2009, Catane, Italie (2009)
2005
[INV27] S. Juillaguet and J. Camassel
Specific aspects of type II heteropolytype stacking faults in SiC
5th European Conference on Silicon Carbide and Related Materials, 31 Aug.-4 Sept. 2004, Trans Tech Publications
Materials Science Forum 483-485, 335—40 (2005)
ACTI : Communications avec actes dans un congrès international - Peer reviewed proceedings in international conferences.
2009
[ACTI66] L. Bouguen, L. Konczewicz, S. Contreras, B. Jouault, J. Camassel and Y. Cordier
High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors
EXMATEC, 9th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, Lodz, Pologne, 1st-4th June 2008
Materials Science and Engineering : B, in press, available online 25 December 2008, doi:10.1016/j.mseb.2008.11.041 (2009)
[ACTI67] T. Robert, S. Juillaguet, M. Marinova, T. Chassagne, I. Tsiaoussis, N. Frangis, E. Polychroniadis and J. Camassel
8H stacking faults in a 4H SiC matrix : simple unit cell or double 3C quanrum well ?
7th European conference on silcon carbide and related materials, 2008, 2008, Barcelone, Espagne
Materials Science Forum 615-617, 339 (2009)
[ACTI68] M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre, A. Leycuras and J. Camassel
Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-standing 3C-SiC
7th European Conference on Silicon Carbide and Related Materials, 2008-09-07, 2008-09-11, 2008, Barcelone, Espagne
Materials Science Forum 615-617, 49-52 (2009)
[ACTI69] A. Tiberj, M. Martin, N. Camara, P. Poncharal, T. Michel, J. Sauvajol, P. Godignon and J. Camassel
AFM and Raman Studies of Graphene Exfoliated on SiC
7th European Conference on silicon carbide and related marterials 2008, 2008-09-07, 2008-09-11, Barcelona, Espagne
Materials Science Forum 615-617, 215-218 (2009)
[ACTI70] N. Camara, J. -R. Huntzinger, A. Tiberj, G. Rius, B. Jouault, F. Pérez Murano, N. Mestres, P. Godignon and J. Camassel
Growth of Few Layer Graphene Layers on 6H, 4H and 3C-SiC Substrates
7th European Conference on silicon carbide and related marterials 2008, 2008-09-07, 2008-09-11, Barcelona, Espagne
Materials Science Forum 615-617, 203-206 (2009)
[ACTI71] J. Eid, I. Galben, G. Zoulis, T. Robert, D. Chaussende, S. Juillaguet, A. Tiberj and J. Camassel
Nitrogen doping of 3C-SiC single crystals grown by CF-PVT
7th European Conference on silicon carbide and related marterials 2008, 2008, 2008, barcelone, Espagne
Materials Science Forum 615-617, 45 (2009)
[ACTI72] F. Oehlschläger, S. Juillaguet, H. Peyre, J. Camassel and P. Wellmann
Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity
7th European Conference on Silicon Carbide and Related Materials, 2008-09-07, 2008-09-11, 2008, Barcelone, Espagne, Trans Tech Publications, Switzerland
Materials Science Forum 615-617, 259-262 (2009)
[ACTI73] H. Peyre, J. Pezoldt, M. Voelskow, W. Skorupa and J. Camassel
SIMS Investigation of Gex(4H-SiC)1-x Solid Solutions Synthesized by Ge-ion Implantation up to x=0.2
7th European Conference on Silicon Carbide and Related Materials, 2008-09-07, 2008-09-11, 2008, France, Trans Tech Publications, Switzerland
Materials Science Forum 615-617, 465-468 (2009)
[ACTI74] L. Konczewicz, S. Contreras, H. Ait-Kaci, Y. Cuminal, J. -B. Rodriguez and P. Christol
Effect of pressure on electrical properties of short period InAs/GaSb superlattice
13th International Conference on High Pressure Semiconductor Physics (HPSP-13), JUL 22-25, 2008 Fortaleza, BRAZIL, Wiley-VCH Verlag GmbH
Physica Status Solidi B 246(3), 643—7 (2009)
[ACTI75] L. Konczewicz, E. Litwin-Staszewska, S. Contreras, R. Piotrzkowski and L. Dmowski
Electrical transport phenomena in magnesium-doped p-type GaN
13th International Conference on High Pressure Semiconductor Physics (HPSP-13), JUL 22-25, 2008 Fortaleza, BRAZIL, Wiley-VCH Verlag GmbH
Physica Status Solidi B 246(3), 658—63 (2009)
2008
[ACTI76] D. Chaussende, F. Mercier, A. Boulle, F. Conchon, M. Soueidan, G. Ferro, A. Mantzari, A. Andreadou, E. K. Polychroniadis, C. Balloud, S. Juillaguet, J. Camassel and M. Pons
Prospects for 3C-SiC bulk crystal growth
Symposium on Substrates of Wide Bandgap Materials held at the 2007 E-MRS Conference, MAY 29-30, 2007 Strasbourg, FRANCE, Elsevier Science B.V.
Journal of Crystal Growth 310(5), 976—81 (2008)
2007
[ACTI77] O. Couturaud, B. Jouault, S. Bonifacie, C. Chaubet and D. Mailly
Tunneling and Coulomb blockade in narrow GaAs/InGaAs/AlGaAs Hall bars in the quantum Hall regime
Physics of Semiconductors, 28th International Conference, 24-28 July 2006, AIP
AIP Conference Proceedings 893, 663—4 (2007)
[ACTI78] W. Desrat, D. K. Maude, Z. R. Wasilewski, R. Airey and G. Hill
Weak antilocalization in a GaAs quantum well in the presence of a strong in-plane magnetic field
Physics of Semiconductors, 28th International Conference, 24-28 July 2006, AIP
AIP Conference Proceedings 893, 551—2 (2007)
[ACTI79] J. Eid, J. L. Santailler, B. Ferrand, G. Rolland, M. Burdin, R. Lewandowska and J. Camassel
Effect of growth conditions on cubic silicon carbide crystals grown from silicon solution
6th European Conference on Silicon Carbide and Related Materials, SEP, 2006 Newcastle upon Tyne, ENGLAND, Trans Tech Publications Ltd.
Materials Science Forum 556-557, 29—32 (2007)
[ACTI80] Yeon-Suk Jang, S. A. Sakwe, P. J. Wellmann, S. Juillaguet, H. Peyre, J. Camassel and J. W. Steeds
Growth and characterization of 13C enriched 4H-SiC for fundamental materials studies
6th European Conference on Silicon Carbide and Related Materials, SEP, 2006 Newcastle upon Tyne, ENGLAND, Trans Tech Publications Ltd.
Materials Science Forum 556-557, 13—16 (2007)
[ACTI81] H. Peyre, N. Habka, V. Souliere, M. Soueidan, G. Ferro, Y. Monteil and J. Camassel
SIMS investigation of Ge incorporation in 3C-SiC layers grown from Ge-Si melts
6th European Conference on Silicon Carbide and Related Materials, SEP, 2006 Newcastle upon Tyne, ENGLAND, Trans Tech Publications Ltd.
Materials Science Forum 556-557, 477—80 (2007)
[ACTI82] M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras and J. Camassel
Trends in dopant incorporation for 3C-SiC films on silicon
6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006, Trans Tech Publications Ltd.
Materials Science Forum 556-557, 207—10 (2007)
[ACTI83] R. Lewandowska, J. Eid, J. Camassel, J. L. Santailler and B. Ferrand
Micro-Raman investigation of cubic silicon carbide crystals grown from the travelling zone method
5th Brazo ;oam/German Workshop on Applied Surface Science, APR 03-07, 2006 Mangaratiba, BRAZIL, Wiley-VCH
Physica Status Solidi A 204(4), 1008—13 (2007)
[ACTI84] M. Zielinski, S. Ndiaye, T. Chassagne, S. Juillaguet, R. Lewandowska, M. Portail, A. Leycuras and J. Camassel
Strain and wafer curvature of 3C-SiC films on silicon : influence of the growth conditions
International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC’06) No8, 2006-05-15, 2006-05-17, 2006, Cádiz, Espagne, Wiley-VCH, Berlin, ALLEMAGNE
Physica Status Solidi A 204(4), 981-986 (2007)
[ACTI85] M. Stoehr, S. Juillaguet, T. Kyaw and J. Wen
Dopant effect of the optical properties of ZnO nanostructures
8th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC2006), 2006, 2006, Cadiz, Espagne
Physica Status Solidi C 4(4), 1432 (2007)
[ACTI86] S. Juillaguet, M. Albrecht, R. Lewandowska, J. Camassel and T. Chassagne
Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiC
Physica Status Solidi C 4(4), 1513-1516 (2007)
2006
[ACTI87] M. Baj, M. Gryslas, B. Jouault, D. Maude, G. Faini, U. Gennser and A. Cavanna
Spectroscopy of a single Si donor by the resonant tunnelling experiment
35th International School on the Physics of Semiconducting Compounds, JUN 17-23, 2006 Jaszowiec, POLAND, Inst. Phys. Polish Acad. Sci
Acta Physica Polonica A 110(2), 157—62 (2006)
[ACTI88] D. J. Brink, H. W. Kunert, J. B. Malherbe and J. Camassel
Pulsed electron beam annealing : a tool for post-implantation damage control in SiC
10th International Conference on the Formation of Semiconductor Interfaces, 3-8 July 2005, EDP Sciences
Journal de Physique IV (Proceedings) 132, 215—19 (2006)
[ACTI89] B. Chenaud, C. Chaubet, F. Schoppfer, L. Saminadayar and D. Mailly
Overlap of edge channels and Aharonov-Bohm’s interferences
60th Yamada Conference on Research in High Magnetic Fields, AUG 16-19, 2006 Sendai, JAPAN, IOP Publishing
Journal of Physics : Conference Series 51(1), 395—8 (2006)
[ACTI90] L. Latu-Romain, D. Chaussende, C. Balloud, S. Juillaguet, L. Rapenne, E. Pernot, J. Camassel, M. Pons and R. Madar
Characterization of bulk 111 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), SEP 18-23, 2005 Pittsburgh, PA, Trans Tech Publications
Materials Science Forum 527-529, 99—102 (2006)
[ACTI91] J. Eid, J. L. Santailler, B. Ferrand, P. Ferret, J. Pesenti, A. Basset, A. Passero, A. Mantzari, E. K. Polychroniadis, C. Balloud, P. Soares and J. Camassel
Growth of cubic silicon carbide crystals from solution
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), SEP 18-23, 2005 Pittsburgh, PA, Trans Tech Publications
Materials Science Forum 527-529, 123—6 (2006)
[ACTI92] S. Blanque, R. Perez, N. Mestres, S. Contreras, J. Camassel and P. Godignon
Impact of annealing temperature ramps on the electrical activation of N+ and P+ co-implanted SiC layers
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), SEP 18-23, 2005 Pittsburgh, PA, Trans Tech Publications
Materials Science Forum 527-529, 795—8 (2006)
[ACTI93] A. Perez-Tomas, P. Godignon, J. Camassel, N. Mestres and V. Souliere
PECVD deposited TEOS for field-effect mobility improvement in 4H-SiC MOSFETs on the (0001) and (11-20) faces
nternational Conference on Silicon Carbide and Related Materials (ICSCRM 2005), SEP 18-23, 2005 Pittsburgh, PA, Trans Tech Publications
Materials Science Forum 527-529, 1047—50 (2006)
[ACTI94] C. Blanc, D. Tournier, P. Godignon, D. J. Brink, V. Souliere and J. Camassel
Process optimisation for 11-20 4H-SiC MOSFET applications
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), SEP 18-23, 2005 Pittsburgh, PA, Trans Tech Publications
Materials Science Forum 527-529, 1051—4 (2006)
[ACTI95] S. Contreras, M. Zielinski, L. Konczewicz, C. Blanc, S. Juillaguet, R. Muller, U. Kunecke, P. Wellmann and J. Camassel
Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped -SiC substrates grown by the M-PVT method
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), SEP 18-23, 2005 Pittsburgh, PA, Trans Tech Publications
Materials Science Forum 527-529, 633—6 (2006)
[ACTI96] M. Soueidan, G. Ferro, J. Stoemenos, E. K. Polychroniadis, D. Chaussende, F. Soares, S. Juillaguet, J. Camassel and Y. Monteil
Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), SEP 18-23, 2005 Pittsburgh, PA, Trans Tech Publications
Materials Science Forum 527-529, 287—90 (2006)
[ACTI97] J. Weyher, R. Lewandowska, L. Macht, B. Łucznik and I. Grzegory
Raman and PL Study of Thick HVPE-grown GaN
11th Conference on Defects Recognition Imaging and Physics in Semiconductors, SEP 13-19, 2005 Beijing, PEOPLES R CHINA
Materials science in semiconductor processing 9(1-3), 175 (2006)
[ACTI98] L. H. Dmowski, K. Dybko, J. Plesiewicz, T. Suski, H. Lu, W. Schaff, M. Kurouchi, Y. Nanishi, L. Konczewicz, V. Cimalla and O. Ambacher
Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments
6th International Conference on Nitride Semiconductors (ICNS-6) Bremen, GERMANY, AUG 28-SEP 02, 2005, Wiley-VCH
Physica Status Solidi B 243(7), 1537—40 (2006)
[ACTI99] J. Eid, J. L. Santailler, B. Ferrand, A. Basset, A. Passero, R. Lewandowska, C. Balloud and J. Camassel
Improvement of cubic silicon carbide crystals grown from solution
Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS, MAY 29-JUN 02, 2006 Nice, FRANCE, Academic Press
Superlattices and Microstructures 40(4-6), 201—4 (2006)
2005
[ACTI100] A. Mantzari, E. K. Polycgroniadis, J. Wollweber, A. Freudenberg, C. Balloud and J. Camassel
Defect status near the SiC/substrate interface : investigation of the first stage of the growth by physical vapour transport
Proceedings of the 14th International Conference on Crystal Growth and the 12th International Conference on Vapor Growth and Epitaxy, Elsevier
Journal of Crystal Growth 275(1-2), 1813—19 (2005)
[ACTI101] C. Sartel, V. Souliere, M. Zielinski, Y. Monteil, J. Camassel and S. Rushworth
Aluminium doping of 4H-SiC grown with hexamethyldisilane
5th European Conference on Silicon Carbide and Related Materials, 31 Aug.-4 Sept. 2004, Trans Tech Publications
Materials Science Forum 483-485, 121—4 (2005)
[ACTI102] E. K. Polychroniadis, C. Balloud, S. Juillaguet, G. Ferro, Y. Monteil, J. Camassel and J. Stoemenos
Comparative evaluation of free-standing 3C-SiC crystals
5th European Conference on Silicon Carbide and Related Materials, 31 Aug.-4 Sept. 2004, Trans Tech Publications
Materials Science Forum 483-485, 229—32 (2005)
[ACTI103] J. Pernot, S. Contreras, J. Camassel and J. L. Robert
Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC
5th European Conference on Silicon Carbide and Related Materials, 31 Aug.-4 Sept. 2004, Trans Tech Publications
Materials Science Forum 483-485, 401—4 (2005)
[ACTI104] C. Blanc, M. Zielinski, V. Souliere, C. Sartel, S. Juillaguet, S. Contreras, J. Camassel and Y. Monteil
Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on -cut (1,1,-2,0) 4H-SiC substrates
5th European Conference on Silicon Carbide and Related Materials, 31 Aug.-4 Sept. 2004, Trans Tech Publications
Materials Science Forum 483-485, 117—20 (2005)
[ACTI105] M. Zielinski, C. Balloud, S. Juillaguet, B. Boyer, V. Souliere and J. Camassel
Excitation power dependence of Al-related features in the LTPL spectra of 4H-SiC
5th European Conference on Silicon Carbide and Related Materials, 31 Aug.-4 Sept. 2004, Trans Tech Publications
Materials Science Forum 483-485, 449—52 (2005)
[ACTI106] S. Blanque, J. Lyonnet, J. Camassel, R. Perez, P. Terziyska, S. Contreras, P. Godignon, N. Mestres and J. Pascual
Homogeneity of nitrogen and phosphorus co-implants in 4H-SiC : full wafer scale investigation
5th European Conference on Silicon Carbide and Related Materials, 31 Aug.-4 Sept. 2004, Trans Tech Publications
Materials Science Forum 483-485, 645—8 (2005)
[ACTI107] J. Camassel and S. Juillaguet
Intensity ratio of the doublet signature of excitons bound to 3C-SiC stacking faults in a 4H-SiC matrix
5th European Conference on Silicon Carbide and Related Materials, 31 Aug.-4 Sept. 2004, Trans Tech Publications
Materials Science Forum 483-485, 331—4 (2005)
[ACTI108] C. Jacquier, G. Ferro, M. Zielinski, E. K. Polychroniadis, A. Andreadou, J. Camassel and Y. Monteil
Is the Al solubility limit in SiC temperature dependent or not ?
5th European Conference on Silicon Carbide and Related Materials, 31 Aug.-4 Sept. 2004, Trans Tech Publications
Materials Science Forum 483-485, 125—8 (2005)
[ACTI109] T. Chassagne, G. Ferro, H. Haas, H. Mank, A. Leycuras, Y. Monteil, F. Soares, C. Balloud, Ph. Arcade, C. Blanc, H. Peyre, S. Juillaguet and J. Camassel
Control of 3C-SiC/Si wafer bending by the "checker-board" carbonization method
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi A 202(4), 524—30 (2005)
[ACTI110] C. Sartel, V. Souliere, M. Zielinski, Y. Monteil, J. Camassel, L. Smith and S. Rushworth
Control of Al-doping in 4H-SiC homoepitaxial layers grown with a HMDS/TMA/P mixture
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi A 202(4), 550—4 (2005)
[ACTI111] S. Juillaguet, C. Balloud, V. Souliere, C. Sartel, J. Camassel and Y. Monteil
Control of epitaxial layers grown on 4H-SiC : from 3C microcrystalline inclusions to type II quantum well structures
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi A 202(4), 593—7 (2005)
[ACTI112] I. Bisotto, B. Jouault, A. Raymond, W. Zawadzki and G. Strasser
Donor ionization energy in bulk GaAs for different concentrations and magnetic fields
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi A 202(4), 614—18 (2005)
[ACTI113] S. Blanque, J. Lyonnet, R. Perez, P. Terziyska, S. Contreras, P. Godignon, N. Mestres, J. Pascual and J. Camassel
Full wafer size investigation of N+ and P+ coimplanted layers in 4H-SiC
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi A 202(4), 698—704 (2005)
[ACTI114] P. J. Wellmann, T. Straubinger, U. Kunecke, R. Muller, S. A. Sakwe, M. Pons, A. Thuaire, A. Crisci, M. Mermoux, L. Auvray and J. Camassel
Optical mapping of aluminum doped p-type SiC wafers
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi A 202(4), 598—601 (2005)
[ACTI115] C. Blanc, D. Tournier, V. Souliere, S. Juillaguet, S. Contreras, M. Zielinski, P. Godignon, Y. Monteil and J. Camassel
Technical aspects of 1120 4H-SiC MOSFET processing
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi A 202(4), 680—5 (2005)
[ACTI116] C. Consejo, S. Contreras, L. Konczewicz, P. Lorenzini, Y. Cordier, C. Skierbiszewski and J. L. Robert
High temperature electrical investigations of (Al,Ga)N/GaN heterostructures _ [Hall sensor applications
7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi C(4), 1438—43 (2005)
[ACTI117] M. Stoehr, S. Juillaguet, T. M. Kyaw and J. G. Wen
Optical properties of Ga2O3 doped ZnO nanoribbons
7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi C(4), 1314—18 (2005)
[ACTI118] C. Jacquier, G. Ferro, M. Zielinski, E. K. Polychroniadis, A. Andreadou, J. Camassel and Y. Monteil
Probing the effect of temperature on the incorporation of Al species in a SiC matrix
7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi C(4), 1265—8 (2005)
AFF : Communications par affiche dans un congrès international ou national - Non peer reviewed poster presentations in international or national conferences.
2009
[AFF27] N. Jegenyes, J. Lorenzi, G. Zoulis, V. Soulière, J. Dazord, S. Juillaguet and G. Ferro
Effect of growth parameters on the surface morphology of 3C-SiC homoepitaxial layers grown by chemical vapor deposition
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC ’09), 2009, Catane, Italie (2009)
[AFF28] J. Lorenzi, G. Zoulis, O. Kim-Hak, S. Juillaguet, G. Ferro and J. Camassel
Growth and characterization of low doped 3C-SiC layers deposited by the VLS technique
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC ’09), 2009, Catane, Italie (2009)
[AFF29] G. Zoulis, J. Lorenzi, R. Vasiliauskas, N. Jegenyes, M. Beshkova, S. Juillaguet, H. Peyre, V. Soulière, M. Syväjärvi, G. Ferro, J. Camassel and R. Yakimova
Low temperature photoluminescence investigations of 3C-SiC quasi-substrates grown on hexagonal 6H-SiC seeds
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC ’09), 2009, Catane, Italie (2009)
[AFF30] J. Camassel, J. -R. Huntzinger, A. Tiberj, M. Syväjärvi, R. Yakimova and F. Giannazzo
Micro-Raman investigation of few graphene layers grown on 6H-SiC
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC ’09), 2009, catane, Italie (2009)
[AFF31] S. Sonde, F. Giannazzo, V. Raineri, R. Yakimova and J. Camassel
Nanoscale current transport at graphene/SiC interface by scanning probe microscopy
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC ’09), 2009, Catane, Italie (2009)
[AFF32] T. Robert, M. Marinova, S. Juillaguet, A. Henry, E. Polychroniadis and J. Camassel
Observation of 3C zigzag faults in low-doped 4H-SiC epitaxial layers
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC ’09), 2009, France (2009)
[AFF33] A. Constant, N. Camara, P. Godignon, J. Camassel and J. Decams
Rapid thermal oxidation of 3C_ [and 4H-SiC using in-situ thermal cycling in nitrogen
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC ’09), 2009, Catane, Italie (2009)
2008
[AFF34] R. Chaghi, Y. Cuminal, H. Aït-Kaci, J. Rodriguez, P. Grech, L. Konczewicz and P. Christol
Improvement material performances of InAs/GaSb superlattice photodiodes
EXMATEC, 2008-06-02, 2008-06-04, Łódź, Pologne (2008)
[AFF35] L. Konczewicz, S. Contreras, L. Bouguen, B. Jouault, J. Camassel and Y. Cordier
Pressure characterization of AlGaN/GaN Hall sensors
13th International Conference on High Pressure Semiconductor Physics, 2008-07-22, 2008-07-25, Fortaleza,, Brésil (2008)
[AFF36] J. Camassel, S. Juillaguet and T. Robert
Recent aspects of in-grown stacking faults in 4H-SiC
17th European Heterostructure Technology Workshop, HETECH 2008, in Venice, Italy, 2008-11, Venice, Italie (2008)
[AFF37] V. Mosser, A. Kerlain, Y. Haddab, L. Bouguen, B. Jouault and S. Contreras
Zero-thermal drift quantum Well Hall Sensor
Proceeding Eurosensors XXII, 2008-09, Dresden, Allemagne (2008)
2007
[AFF38] L. Bouguen, S. Contreras, B. Jouault, L. Konczewicz, Y. Cordier, M. Azize, S. Chenot and N. Baron
Evaluation of magnetic sensors based on AlGaN/GaN heterostructures : temperature dependence
Proceeding of 16th European workshop on Heterostructure Technology, 2007-09, Frejus, France (2007)
[AFF39] H. Peyre, N. Habka, V. Soulière, M. Soueidan, G. Ferro, Y. Monteil and J. Camassel
SIMS Investigation of Ge and N Incorporation in 3C-SiC Layers Grown by VLS from Ge-Si Melts
Hetero-SiC’07, 2007-06-28, 2007-06-29, Grenoble, France (2007)
[AFF40] V. Mosser, A. Kerlain, O. Couturaud, C. Chaubet, B. Jouault, S. Contreras, J. Reverchon and S. Cassette
Top injection and side injection to a buried 2DEG : beyond the Murrmann-Berger model
Proceeding of 16th European workshop on Heterostructure Technology, 2007-09, Frejus, France (2007)
2006
[AFF41] R. Lewandowska, J. Weyher, M. Albrecht, L. Konczewicz and B. Łucznik
Calibration of the PEC Etching Method of GaN
EXMATEC, 2006-05-14, 2006-05-17, Cadiz, Espagne (2006)
AP : Autres productions : thèses - Other productions : thesis.
2009
[AP15] L. Bouguen
Annulation de la dérive thermique de capteurs magnétiques à base d’hétérostructures pseudomorphiques AlGaAs/InGaAs/GaAs
Thèse d’Université 05/02/2009, Université Montpellier 2 (Directeur de thèse : J.-L. Robert)
2008
[AP16] O. Couturaud
Effets tunnels dans des nano-capteurs de Hall
Thèse d’Université 22/05/2008, Université Montpellier 2 (Directeur de thèse : C. Chaubet)
2007
[AP17] J. Eid
Croissance en solution de SiC
Thèse d’Université 25/09/2007, INPG Grenoble (Directeur de thèse : J. Camassel)
2006
[AP18] I. Bisotto
Etude expérimentale par magnéto-transport et magnéto-optique du désordre dans les gaz 2D
Thèse d’Université 21/12/2006, Université Montpellier 2 (Directeur de thèse : A. Raymond)
2005
[AP19] C. Blanc
Elaboration et caractérisation de composants type MOSFET en 4H-SiC orienté (11-20)
Thèse d’Université 12/12/2005, Université Montpellier 2 (Directeur de thèse : J. Camassel)
[AP20] C. Balloud
Méthode de caractérisation optique de SiC
Thèse d’Université 16/12/2005, Université Montpellier 2 (Directeur de thèse : J. Camassel)
[AP21] B. Chenaud
Vers un interféromètre électronique de type Fabry-Pérot
Thèse d’Université 15/11/2005, Université Montpellier 2 (Directeur de thèse : C. Chaubet)
| Equipe 4 - 2005-2009 : TERABIO (des Térahertz à la biologie) |
ACL : Articles dans des revues internationales ou nationales avec comité de lecture répertoriées par l’AERES ou dans les bases de données internationales (ISI Web of Knowledge, Pub Med...)International or National peer-reviewed articles in journals referenced in international databases.
2009
[ACL195] M. Martin, G. Palestino, T. Cloitre, V. Argawal, L. Zimanyi and C. Gergely
Three-dimensional spatial resolution of the nonlinear photoemission from biofunctionalized porous silicon microcavity
Applied Physics Letters 94, 223313 (2009)
[ACL196] L. Szyk-Warszynska, C. Gergely, E. Jarek, F. Cuisinier, R. Socha and P. Warszynski
Calcium uptake by casein embedded in polyelectrolyte multilayer
Colloids and Surfaces A : Physicochem. Eng. Aspects 343, 118 (2009)
[ACL197] J. -P. Caumes, B. Chassagne, D. Coquillat, F. Teppe and W. Knap
Focal-plane micro-bolometer arrays for 0.5 THz spatial room-temperature imaging
Electronics Letters 45(1), 34—5 (2009)
[ACL198] T. Nishimura, N. Magome, I. Khmyrova, T. Suemitsu, W. Knap and T. Otsuji
Analysis of fringing effect on resonant plasma frequency in plasma wave devices
Japanese Journal of Applied Physics 48, 04C096 (2009)
[ACL199] E. Estephan, M. -B. Saab, C. Larroque, M. Martin, F. Olsson, S. Lourdudoss and C. Gergely
Peptides for functionalization of InP semiconductors
Journal of Colloid and Interface Science 1, 1 (2009)
[ACL200] J. -F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, W. Knap, J. Mateos, T. Gonzalez, S. Perez and D. Pardo
A Monte Carlo investigation of plasmonic noise in nanometric n-In0.53Ga0.47 As channels
Journal of Statistical Mechanics : Theory and Experiment 2009(1), P01040 (12 pp.) (2009)
[ACL201] M. -B. Saab, E. Estephan, T. Cloitre, R. Legros, F. Cuisinier, C. Gergely and L. Zimanyi
Assembly of purple membranes on polyelectrolyte films
Langmuir 25(9), 5159-5167 (2009)
[ACL202] A. El Fatimy, J. Delagnes, A. Younus, E. Nguema Agnandji, F. Teppe, W. Knap, E. Abraham and P. Mounaix
Plasma wave field effect transistor as a resonant detector for 1 terahertz imaging applications
Optics Communications 282, 3055-3058 (2009)
[ACL203] A. V. Antonov, V. I. Gravilenko, A. V. Maremyanin, S. V. Morozov, F. Teppe and W. Knap
Resonance detection of terahertz radiation in submicrometer field-effect GaAs/AlGaAs transistors with two-dimensional electron gas
Semiconductors 43(4), p. 528-531 (2009)
2008
[ACL204] V. V. Popov, O. V. Polischuk, W. Knap and A. El Fatimy
Broadening of the plasmon resonance due to plasmon-plasmon intermode scattering in terahertz high-electron-mobility transistors
Applied Physics Letters 93(26), 263503 (3 pp.) (2008)
[ACL205] S. Boubanga-Tombet, F. Teppe, D. Coquillat, S. Nadar, N. Diakonova, H. Videlier, W. Knap, A. Shchepetov, C. Gardes, Y. Roelens, S. Bollaert, D. Seliuta, R. Vadoklis and G. Valusis
Current driven resonant plasma wave detection of terahertz radiation : toward the Dyakonov-Shur instability
Applied Physics Letters 92(21), 212101—1 (2008)
[ACL206] J. -F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, W. Knap, J. Mateos, T. Gonzalez, S. Perez and D. Pardo
Monte Carlo investigation of terahertz plasma oscillations in ultrathin layers of n-type In0.53Ga0.47As
Applied Physics Letters 92(4), 042113—1 (2008)
[ACL207] A. Shchepetov, C. Gardes, Y. Roelens, A. Cappy, S. Bollaert, S. Boubanga-Tombet, F. Teppe, D. Coquillat, S. Nadar, N. Diakonova, H. Videlier, W. Knap, D. Seliuta, R. Vadoklis and G. Valusis
Oblique modes effect on terahertz plasma wave resonant detection in InGaAs/InAlAs multichannel transistors
Applied Physics Letters 92(24), 242105—1 (2008)
[ACL208] Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, G. M. Tsymbalov, D. Coquillat and F. Teppe
Room temperature terahertz emission from grating coupled two-dimensional plasmons
Applied Physics Letters 92(20), 201108—1 (2008)
[ACL209] M. Sakowicz, J. Lusakowski, K. Karpierz, M. Grynberg, W. Knap, K. Kohler, G. Valusis, K. Golaszewska, E. Kaminska and A. Piotrowska
Terahertz detection by two dimensional plasma field effect transistors in quantizing magnetic fields
Applied Physics Letters 92(20), 203509—1 (2008)
[ACL210] A. Lisauskas, W. von Spiegel, S. Boubanga-Tombet, A. El Fatimy, D. Coquillat, F. Teppe, N. Diakonova, W. Knap and H. G. Roskos
Terahertz imaging with GaAs field-effect transistors
Electronics Letters 44(6), 408—9 (2008)
[ACL211] M. Sikirić, C. Gergely, R. Elkaïm, F. Cuisinier, E. Wachtel and H. Füredi-Milhofer
Biomimetic organic-inorganic nanocomposite coatings for titanium implants
Journal of Biomedical Materials Research Part A 89A(3), 759-771 (2008)
[ACL212] E. Estephan, C. Larroque, F. Cuisinier, Z. Balint and C. Gergely
Tailoring GaN Semiconductor Surfaces with Biomolecules
Journal of Physical Chemistry B 112, 8799 (2008)
[ACL213] T. Otsuji, Y. M. Meziani, T. Nishimura, T. Suemitsu, W. Knap, E. Sano, T. Asano and V. V. Popov
Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems
Journal of Physics : Condensed Matter 20(38), 384206 (11 pp.) (2008)
[ACL214] W. Knap, F. Teppe, N. Diakonova, D. Coquillat and J. Lusakowski
Plasma wave oscillations in nanometer field effect transistors for terahertz detection and emission
Journal of Physics : Condensed Matter 20(38), 384205 (7 pp.) (2008)
[ACL215] G. Palestino, V. Agarwal, R. Aulombard, E. Perez and C. Gergely
Biosensing and Protein Fluorescence Enhancement by Functionalized Porous Silicon Devices
Langmuir 24(23), 13765 (2008)
[ACL216] G. Palestino, R. Legros, V. Agarwal, E. Perez and C. Gergely
Functionalization of nanostructured porous silicon microcavities for glucose oxidase detection
Sensors and Actuators : B Chemical 135(1), 27—34 (2008)
2007
[ACL217] G. Palestino, M. B. de la Mora, J. A. del Rio, C. Gergely and E. Perez
Fluorescence tuning of confined molecules in porous silicon mirrors
Applied Physics Letters 91(12), 1—3 (2007)
[ACL218] C. Gergely, B. Szalontai, J. Moradian-Oldak and F. Cuisinier
Polyelectrolyte-Mediated Adsorption of Amelogenin Monomers and Nanospheres Forming Mono_ [or Multilayers
Biomacromolecules 8, 2228 (2007)
[ACL219] N. Diakonova, O. A. Klimenko, W. Knap, Ya. A. Mityagin, V. N. Murzin and S. A. Savinov
Intersubband radiation in weakly bound superlattice structures with wide quantum wells in a transverse electric field
Bulletin of the Lebedev Physics Institute 34(7), 189—93 (2007)
[ACL220] O. Prat, T. Cloitre and R. Aulombard
Thermal and Mechanical Properties of Silicon Tetrachloride (SiCl4) and Germanium Tetrachloride (GeCl4) in Their Vapor and Liquid Phases
Chemical Vapor Deposition 13, 199 (2007)
[ACL221] M. E. Levinshtein, S. L. Rumyantsev, R. Tauk, S. Boubanga-Tombet, N. Diakonova, W. Knap, A. Shchepetov, S. Bollaert, Y. Rollens and M. S. Shur
Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length
Journal of Applied Physics 102(6), 1—5 (2007)
[ACL222] J. Lusakowski, M. J. M. Martinez, R. Rengel, T. Gonzalez, R. Tauk, Y. M. Meziani, W. Knap, F. Boeuf and T. Skotnicki
Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors : experimental and Monte Carlo analysis
Journal of Applied Physics 101(11), 114511—1 (2007)
[ACL223] S. Vainshtein, J. Kostamovaara, V. Yuferev, W. Knap, A. El Fatimy and N. Diakonova
Terahertz emission from collapsing field domains during switching of a gallium arsenide bipolar transistor
Physical Review Letters 99(17), 176601—1 (2007)
[ACL224] V. I. Gavrilenko, E. V. Demidov, K. V. Marem’yanin, S. V. Morozov, W. Knap and J. Lusakowski
Electron transport and detection of terahertz radiation in a GaN/AlGaN submicrometer field-effect transistor
Semiconductors 41(2), 232—4 (2007)
2006
[ACL225] R. Tauk, F. Teppe, S. Boubanga-Tombet, D. Coquillat, W. Knap, Y. M. Meziani, C. Gallon, F. Boeuf, T. Skotnicki, C. Fenouillet-Beranger, D. K. Maude, S. Rumyantsev and M. S. Shur
Plasma wave detection of terahertz radiation by silicon field effects transistors : responsivity and noise equivalent power
Applied Physics Letters 89(25), 253511—1 (2006)
[ACL226] A. El Fatimy, F. Teppe, N. Diakonova, W. Knap, D. Seliuta, G. Valusis, A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy and S. Rumyantsev
Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors
Applied Physics Letters 89(13), 131926—1 (2006)
[ACL227] N. Diakonova, M. Dyakonov, A. El Fatimy, J. Lusakowski, W. Knap, M. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, C. Gaquiere, D. Theron and A. Cappy
Room-temperature Terahertz Emission from Nanometer Field Effect Transistors
Applied Physics Letters 88(14), 141906 (2006)
[ACL228] J. Torres, P. Nouvel, A. Akwoue-Ondo, L. Chusseau, F. Teppe, A. Shchepetov and S. Bollaert
Tunable plasma wave resonant detection of optical beating in high electron mobility transistor
Applied Physics Letters 89(20), 201101.1-201101.3 (2006)
[ACL229] A. El Fatimy, S. Boubanga-Tombet, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, C. Gaquiere, D. Theron and A. Cappy
Terahertz detection by GaN/AlGaN transistors
Electronics Letters 42(23), 1342—4 (2006)
[ACL230] V. Ryzhii, A. Satou, W. Knap and M. S. Shur
Plasma oscillations in high-electron-mobility transistors with recessed gate
Journal of Applied Physics 99(8), 84507—1 (2006)
[ACL231] V. Tamosiunas, D. Seliuta, A. Juozapavicius, E. Sirmulis, G. Valusis, A. El Fatimy, Y. Meziani, N. Diakonova, J. Lusakowski, W. Knap, A. Lisauskas, H. G. Roskos and K. Kohler
New trends in terahertz electronics
Lithuanian Journal of Physics 46(2), 131—45 (2006)
[ACL232] D. Veksler, F. Teppe, A. P. Dmitriev, V. Yu. Kachorovskii, W. Knap and M. S. Shur
Detection of terahertz radiation in gated two-dimensional structures governed by dc current
Physical Review B 73(12), 125328—1 (2006)
2005
[ACL233] J. Lusakowski, W. Knap, Y. Meziani, J. -P. Cesso, A. El Fatimy, R. Tauk, N. Diakonova, G. Ghibaudo, F. Boeuf and T. Skotnicki
Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors
Applied Physics Letters 87(5), 53507—1 (2005)
[ACL234] C. Skierbiszewski, K. Dybko, W. Knap, M. Siekacz, W. Krupczynski, G. Nowak, M. Bockowski, J. Lusakowski, Z. R. Wasilewski, D. Maude, T. Suski and S. Porowski
High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy
Applied Physics Letters 86(10), 102106—1 (2005)
[ACL235] F. Teppe, D. Veksler, V. Yu. Kachorovski, A. P. Dmitriev, X. Xie, X. -C. Zhang, S. Rumyantsev, W. Knap and M. S. Shur
Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor
Applied Physics Letters 87(2), 22102—1 (2005)
[ACL236] F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii and S. Rumyantsev
Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor
Applied Physics Letters 87(5), 52107—1 (2005)
[ACL237] I. Pelsoczi, T. Kinga, C. Gergely, F. Andras, I. Dekany and F. Cuisinier
Structural Characterization of Self-Assembled Polypeptide Films on Titanium and Glass Surfaces by Atomic Force Microscopy
Biomacromolecules 6, 3345 (2005)
[ACL238] N. Pala, F. Teppe, D. Veksler, Y. Deng, M. Shur and R. Gaska
Nonresonant detection of terahertz radiation by silicon-on-insulator MUM
Electronics Letters 41(7), 447 (2005)
[ACL239] N. Diakonova, F. Teppe, J. Lusakowski, W. Knap, M. Levinshtein, A. P. Dmitriev, M. S. Shur, S. Bollaert and A. Cappy
Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors
Journal of Applied Physics 97(11), 114313—1 (2005)
[ACL240] J. Lusakowski, N. Diakonova, L. Varani, J. Mateos, T. Parenty, A. Cappy, V. Popov and M. Shur
Voltage tunable terahertz emission from quasi ballistic nanometer InGaAs transistors in high magnetic fields
Journal of Applied Physics 97, 064307 (2005)
[ACL241] J. Lusakowski, W. Knap, N. Diakonova, L. Varani, J. Mateos, T. Gonzalez, Y. Roelens, S. Bollaert, A. Cappy and K. Karpierz
Voltage tuneable terahertz emission from a ballistic nanometer InGaAs/InAlAs transistor
Journal of Applied Physics 97(6), 64307—1 (2005)
[ACL242] H. Flores, J. Menchaca, F. Tristan, C. Gergely, E. Perez and F. Cuisinier
Polyelectrolyte nanoring structures : critical parameters governing formation and structural analysis
Macromolecules 38(2), 521-526 (2005)
INV : Conférences données à l’invitation du Comité d’organisation dans un congrès national ou international _ [Invited talks in International or National conferences.
[INV28] W. Knap
Field effect transistors for Terahertz imaging
15th Semiconducting and Insulating Materials Conference, June 15-19, 2009, Vilnius, Lithuania. (2009)
[INV29] W. Knap
Nanotransitors for plasmonics
Tutorial XXXVIII International School & Conference on the Physics of Semiconductors, Jaszowiec 2009 Krynica-Zdroj, Poland, June 19th -26th, 2009 (2009)
[INV30] K. K. Oh, M. F. Chang, M. Shur and W. Knap
Sub-Millimeter Wave Signal Generation and Detection in CMOS
International Microwave Symposium 2009 (IMS 2009) Boston, Massachusetts, June 2009 (2009)
2008
[INV31] C. Gergely
Biointerface and cell studies by atomic force microscopy
AFM Workshop, 2008, Nancy, France (2008)
[INV32] W. Knap, T. Otsuji and Y. Meziani
Nanotransistors for Terahertz Integrated Sources and Detectors
International Workshop on Integrated Quantum Electronics (RCIQE) Hokkaido University Sapporo Japan March 2008 (2008)
[INV33] C. Gergely
Nonlinear optics in biophotonics
Advanced Workshop in Nonlinear Optics, 2008, Rome, Italie (2008)
[INV34] C. Gergely
Nouvelles Technologies - Biophotonique
XXXV Forum Jeunes Chercheurs, 2008, La Grande Motte, France (2008)
[INV35] C. Gergely
Photonics in biological applications
Women in Photonics School on Photonic Metamaterials, 2008, Paris, France (2008)
[INV36] W. Knap
Plasma Wave Detectionand Emission by Nanostructures
International Workshop on "Advanced Semiconductor Materials and Devices", 2008-03-03, 2008, Sapporo, Japon (2008)
[INV37] W. Knap
Plasma waves in nanotransistors working as terahertz detectors and emittors
International Workshop on Semiconductor and Carbon based nanostructures in magnetic fields, Grenoble, France, November 2008 (2008)
[INV38] W. Knap and T. Otsuji
Terahertz detectors and emitters based on plasma wave oscillations in nanometer gate length transistors
2008 Conference on Lasers and Electro-Optics (CLEO), 4-9 May 2008, San Jose, Etats-Unis, IEEE, 2 pp. (2008)
2007
[INV39] C. Gergely
Functionalized Semiconductors for photonics based molecular detection
Phoremost Annual Meeting, 2007, Rome, Italie (2007)
[INV40] W. Knap
Terahertz detection and emission related to two dimensional plasma oscillations in nanometer size transistors
IRMMW-THz 2006. 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, 18-22 Sept. 2006, IEEE, 570 (2007)
[INV41] W. Knap and V. Popov
Terahertz nanotransistors
15th International Symposium, Structures, Physics and Technology, Novosibirsk, Russie 25-29 june 2007 (2007)
[INV42] W. Knap
Terahertz Plasma Wave Excitations in Nitrides
International Workshop on Physics of Bulk Nitrides, 2007, Sao Paolo, Brésil (2007)
[INV43] W. Knap
Terahertz Plasma Wave Excitations in twodimensional nanometer systems
International Conference on Nanoscience and Nanotechnology, 2007, 2007, Novesibirsk, Russie (2007)
2006
[INV44] W. Knap
Review on Terahertz nanotransistors
International Workshop of Semiconductor Ekaterinburg Russia 2006 (2006)
[INV45] W. Knap, A. El Fatimy, R. Tauk, S. Boubanga-Tombet and F. Teppe
Terahertz detection related to plasma excitations in nanometer gate length field effect transistor
Group IV Semiconductor Nanostructures-2006. Symposium, 27 Nov-1 Dec 2006, Materials Research Society, 205—12 (2006)
[INV46] W. Knap
Terahertz Emission and detection from Nanotransistors
Keynote International Conference on Infrared and Millimetre Waves Shanghai China September 2006. (2006)
[INV47] W. Knap
Terahertz Plasma GaN Devices
MIKON 2006, Workshop on GaN Devices, May 25 2006, Krakow Poland, 2006, Krakow, Pologne (2006)
[INV48] W. Knap
Terahertz Plasma Wave Devices based on GaN high electron mobility transistors
European Workshop on III-Nitride semiconductor Material and devices,, 2006, Heraklion, Grèce (2006)
[INV49] H. Chong, R. De La Rue, L. O’faolain, T. Krauss, N. Belabas, A. Levenson, F. Raineri, R. Raj, I. Sagnes, D. Coquillat, M. Asti, P. Delaye, P. Lalanne, R. Frey and G. Roosen
3D photonic crystals based on epitaxial III-V semiconductor structures for nonlinear optical interactions
Photonic Crystal Materials and Devices III, 2006, 2006, Strasbourg, France
Proc. SPIE 6182, 618211 (2006)
2005
[INV50] J. Lusakowski, W. Knap and N. Diakonova
Nanometer Transistors for Emission and Detection of THz Radiation
the International Union of Materials Research Societies’ 9th International Conference on Advanced Materials (IUMRS-ICAM), 2005, Singapore, Singapour (2005)
[INV51] R. De La Rue, M. Sorel, N. Johnson, F. Rahman, C. Ironside, L. Cronin, I. Watson, R. Martin, C. Jin, P. Pottier, H. Chong, M. Gnan, A. Jugessur, E. Camargo, G. Erwin, A. Md Zain, I. Ntakis, L. Hobbs, H. Zhang, M. Armenise, C. Ciminelli and D. Coquillat
Photonic crystal and photonic wire device structures
Photonic Crystal Devices, 2005, 2005, Warsaw, Pologne 5950, 595004 (2005)
[INV52] J. Lusakowski and W. Knap
Semiconductor nanometric transistors for terahertz oscillations
The 7-th International Conference-School on Advanced Materials and Thechnologies, 2005, Palanga, Lituanie (2005)
[INV53] R. De La Rue, M. Sorel, N. Johnson, F. Rahman, C. Ironside, L. Cronin, I. Watson, R. Martin, C. Jin, P. Pottier, H. Chong, M. Gnan, A. Jugessur, E. Camargo, G. Erwin, A. Md Zain, I. Ntakis, L. Hobbs and D. Coquillat
Semiconductor-Based Active and Passive Nanophotonics
Nanophotonics for Information Systems (NPIS), 2005, 2005, San Diego, California, états-Unis d’Amérique, NWC2 (2005)
[INV54] W. Knap, J. Lusakowski, F. Teppe and N. Diakonova
Terahertz emission by plasma waves in high electron mobility transistors
7th Topical Workshop on Heterostructure Microelectronics (TWHM 2007), 2005, Hyogo, Japon (2005)
[INV55] W. Knap
Terahertz Nanotransistors
14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 14), 2005, Chicago, états-Unis d’Amérique (2005)
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INV56] W. Knap
Terahertz nanotransistors : plasma oscillations and ballistic effects
Russian-French Workshop on Nanosciences and Nanotechnolgies, Lille, France, august 2005 (2005)
ACTI : Communications avec actes dans un congrès international - Peer reviewed proceedings in international conferences.
2009
[ACTI119] G. Palestino, M. Martin, V. Argawal, R. Legros, T. Cloitre, L. Zimanyi and C. Gergely
Detection and light enhancement of glucose oxidase adsorbed on porous silicon microcavities
6th International Conference on Porous Semiconductor Science and Technology, Mallorca : Spain (2008)
Physica Status Solidi C 6(7), 1624 _ [1628 (2009)
2008
[ACTI120] M. Sakowicz, J. Lusakowski, K. Karpierz, M. Grynberg, W. Gwareky and W. Knap
Antenna effects in detection of 100 GHz radiation by high electron mobility field-effect transistors
2008 17th International Conference on Microwaves, Radar and Wireless Communications (MIKON 2008), 19-23 May 2008, IEEE, 2 pp. (2008)
[ACTI121] T. Nishimura, H. Handa, H. Tsuda, T. Suemitsu, Y. M. Meziani, W. Knap, T. Otsuji, E. Sano, V. Ryzhii, A. Satou, V. V. Popov, D. Coquillat and F. Teppe
Broadband terahertz emission from dual-grating gate HEMT’s _ [mechanism and emission spectral profile
2008 66th Annual Device Research Conference (DRC), 23-25 June 2008, IEEE, 263—4 (2008)
[ACTI122] O. V. Polischuk, V. V. Popov, W. Knap and A. El Fatimy
Plasmon-plasmon scattering in two-dimensional electron channel of a terahertz nanotransistor
2008 International Conference on Advanced Optoelectronics and Lasers, 29 Sept.-4 Oct. 2008, IEEE, 201—3 (2008)
[ACTI123] W. Knap, F. Teppe, A. El Fatimy, N. Diakonova, S. Boubanga-Tombet, D. Coquillat, C. Gaquiere, A. Shchepetov and S. Bollaert
Room temperature detection and emission of terahertz radiation by plasma oscillations in nanometer size transistors
2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics (IRMMW-THz), 2-9 Sept. 2007, IEEE, 998—9 (2008)
[ACTI124] Y. M. Meziani, T. Nishimura, H. Handa, W. Knap, T. Otsuji, E. Sano, V. V. Popov, D. Coquillat and F. Teppe
Room temperature generation of terahertz radiation from dual grating gate HEMTs
2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2008), 15-19 Sept. 2008, IEEE, 2 pp. (2008)
[ACTI125] Y. M. Meziani, H. Handa, W. Knap, T. Otsuji, E. Sano and V. V. Popov
Room temperature terahertz emission from two-dimensional plasmons in doubly interdigitated grating gate heterostructure transistors
2008 Conference on Lasers and Electro-Optics (CLEO), 4-9 May 2008, IEEE, 2 pp. (2008)
[ACTI126] A. El Fatimy, E. Abraham, E. Nguema, P. Mounaix, F. Teppe, W. Knap and T. Otsuji
Room temperature terahertz imaging by a GaAs-HEMT transistor associated with a THz time domain spectrometer
2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2008), 15-19 Sept. 2008, IEEE, 2 pp. (2008)
[ACTI127] J. Lusakowski, M. Sakowicz, K. Karpierz, W. Knap and M. Grynberg
THz detection by field effect transistors : antenna and high magnetic field effects
2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2008), 15-19 Sept. 2008, IEEE, 2 pp. (2008)
[ACTI128] L. Zimanyi, M. Martin, G. Palestino, T. Cloitre, F. Cuisinier and C. Gergely
Hybrid protein-semiconductor photonic structures using bacteriorhodopsin and glucose oxidase
15th European Bioenergetics Conference, 2008, Dublin, Irlande
Biochimica et Biophysica Acta - Bioenergetics(1777), S91 (2008)
[ACTI129] T. Nishimura, H. Handa, H. Tsuda, T. Suemitsu, Y. Meziani, W. Knap, T. Otsuji, E. Sano, V. Ryzhii, V. Popov, D. Coquillat and F. Teppe
Broadband Terahertz Emission from Dual-Grating Gate HEMT’s -Mechanism and Emission Spectral Profile
Device Research Conference UCSB, 2008, 2008, Santa Barbara, états-Unis d’Amérique
Device Research Conference Dig., 263 (2008)
[ACTI130] H. Marinchio, J. Torres, G. Sabatini, P. Nouvel, C. Palermo, L. Chusseau, L. Varani, F. Teppe, P. Shiktorov, E. Starikov, V. Gruzinskis, A. Shchepetov, S. Bollaert and Y. Roelens
Experimental and theoretical investigation of terahertz optical-beating detection by plasma waves in high electron mobility transistors
15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, JUL 23-27, 2007 Tokyo, JAPAN
Physica Status Solidi C 5(1), 257-260 (2008)
[ACTI131] M. Martin, M. -B. Saab, T. Cloitre, E. Estephan, R. Legros, F. Cuisinier, L. Zimanyi and C. Gergely
A multitechnique study of Bacteriorhodopsin’s photonics towards new optical devices
SPIE Europe Photonics, 2008-04-07, 2008-04-10, 2008, Strasbourg, France
Proc. of SPIE 6991, 69910A-1 (2008)
[ACTI132] G. Palestino, V. Agarwal, D. Garcia, R. Legros, E. Perez and C. Gergely
Optical charac of porous siliconmicrocavities for glucose oxidase biosensing
SPIE Europe Photonics, 2008-04-07, 2008-04-10, 2008, Strasbourg, France
Proc. of SPIE 6991, 69911Y-1 (2008)
[ACTI133] Y. Meziani, T. Nishimura, H. Handa, W. Knap, T. Otsuji, E. Sano, V. Popov, D. Coquillat and F. Teppe
Room Temperature Generation of Terahertz Radiation from Dual Grating Gate HEMT’s
33rd International Conference on Infrared, Millimeter, and Terahertz Waves IRMMW-THz 2008 Terahertz for Life, 2008, 2008, Pasedena, California, états-Unis d’Amérique
Proceedings of IRMMW-THz 2008 Terahertz for Life, M5-D12 (2008)
[ACTI134] Y. Meziani, T. Nishimura, H. Handa, H. Tsuda, T. Suemitsu, W. Knap, T. Otsuji, E. Sano, V. Ryzhii, A. Satou, D. Coquillat and F. Teppe
Dual grating gate HEMT as a new broadband source of terahertz radiation at room temperature
Topical Meeting 2 : Terahertz _ [Science and Technology, 2008, 2008, Paris, Villepinte, France
Proceedings of the 2008 EOS Annual Meeting, Topical Meeting 2 : Terahertz _ [ Science and Technology _ [EOS Annual Meeting, 35 (2008)
[ACTI135] D. Coquillat, T. Nishimura, Y. Meziani, S. Nadar, F. Teppe, N. Diakonova, S. Boubanga-Tombet and T. Otsuji
Room temperature terahertz detection from a new doubly interdigitated grating gate transistor
Topical Meeting 2 : Terahertz _ [Science and Technology, 2008, 2008, Paris, Villepinte, France
Proceedings of the 2008 EOS Annual Meeting, Topical Meeting 2 : Terahertz _ [ Science and Technology _ [EOS Annual Meeting, 31 (2008)
[ACTI136] E. Estephan, C. Larroque, T. Cloitre, F. J. G. Cuisinier and C. Gergely
Specific peptide for functionalization of GaN
Biophotonics : Photonic Solutions for Better Health Care, 8 April 2008, SPIE _ [ The International Society for Optical Engineering
Proceedings of the SPIE _ [The International Society for Optical Engineering 6991, 699121—1 (2008)
[ACTI137] N. Diakonova, D. Coquillat, F. Teppe, W. Knap, M. Levinshtein, S. Rumyantsev, M. Poisson, S. Delage, C. Gaquiere, S. Vandenbrouk and A. Cappy
THz emission from AlGaN/GaN high mobility transistors
V International Conference Basic Problems of Optics, 2008, 2008, St Petersburg, Russie
Proceedings of V International Conference Basic Problems of Optics", 21 (2008)
2007
[ACTI138] B. Bakhtiari, E. Mateos, R. Legros and J. Paris
Integration of an absorption heat pump in the kraft pulping process : feasibility study
93rd Annual Meeting Preprints-Book A, 6 Feb. 2007, Pulp and Paper Technical Association of Canada, 235—9 (2007)
[ACTI139] A. Shchepetov, Y. Roelens, S. Bollaert, A. Cappy, N. Diakonova, W. Knap, J. Lusakowski, F. Teppe, A. El Fatimy and M. Dyakonov
Plasma wave HEMTs for THz applications
IRMMW-THz 2006. 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, 18-22 Sept. 2006, IEEE, 136 (2007)
[ACTI140] N. Diakonova, A. El Fatimy, J. Lusakowski, W. Knap, M. I. Dyakonov, M. -A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron and A. Cappy
Room-temperature terahertz emission from nanometer field-effect transistors
IRMMW-THz 2006. 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, 18-22 Sept. 2006, IEEE, 145 (2007)
[ACTI141] M. Siekacz, K. Dybko, D. Maude, M. Potemski, W. Knap and C. Skierbiszewski
Electron-electron interaction effects in quantum hall regime of GaN/AlGaN heterostructures
36th International School on the Physics of Semiconducting Compounds, JUN 09-15, 2007 Jaszowiec, POLAND, Institute of Physics of the Jagellonian University
Acta Physica Polonica A 112(2), 269—73 (2007)
[ACTI142] W. Knap, A. El Fatimy, J. Torres, F. Teppe, M. Orlov and V. Gavrilenko
Plasma wave resonant detection of terahertz radiations by nanometric transistors
16th Ural International Winter School on Physics of Semiconductors, FEB 27-MAR 04, 2006 Kyshtym, RUSSIA
Fizika Nizkikh Temperatur 33(2), 388 (2007)
[ACTI143] M. D. Sikiric, C. Gergely, F. Cuisinier and H. Furedi-Milhofer
Biomimetic organic-inorganic nanocomposite coatings for titanium implants : I. preparation, physicochemical and mechanical characterization
19th International Symposium on Ceramics in Medicine, OCT 10-13, 2006 Chengdu, PEOPLES R CHINA, Trans Tech Publications
Key Engineering Materials 330-332, 389—92 (2007)
[ACTI144] W. Knap, A. El Fatimy, J. Torres, F. Teppe, M. Orlov and V. Gavrilenko
Plasma wave resonant detection of terahertz radiations by nanometric transistors
16th Ural International Winter School on Physics of Semiconductors, FEB 27-MAR 04, 2006 Kyshtym, RUSSIA
Low Temperature Physics 33(2), 291-294 (2007)
[ACTI145] G. Palestino, R. Legros, B. de la Mora Mojica, J. A. P. del Rio, J. E. P. Lopez and C. Gergely
Chemical modification of porous silicon mirror for biosensing applications
Bioengineered and Bioinspired Systems III, 2 May 2007, SPIE _ [The International Society for Optical Engineering
Proceedings of the SPIE _ [The International Society for Optical Engineering 6592, 65920—1 (2007)
[ACTI146] E. Estephan, C. Larroque, P. Martineau, T. Cloitre and C. Gergely
Functionalization of semiconductors for biosensing applications
Bioengineered and Bioinspired Systems III, 2 May 2007, SPIE _ [The International Society for Optical Engineering
Proceedings of the SPIE _ [The International Society for Optical Engineering 6592, 65920—1 (2007)
2006
[ACTI147] Y. M. Meziani, J. Lusakowski, N. Diakonova, W. Knap, D. Seliuta, E. Sirmulis, J. Devenson, G. Valusis, F. Boeuf and T. Skotnicki
Non resonant response to terahertz radiation by submicron CMOS transistors
6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005), AUG, 2005 Awaji Isl, JAPAN, Inst. Electron. Inf. & Commun. Eng
IEICE Transactions on Electronics E89-C(7), 993—8 (2006)
[ACTI148] W. Knap, J. Lusakowski, F. Teppe, N. Diakonova and A. El Fatimy
Terahertz emission and detection by plasma waves in nanometer size field effect transistors
6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005), AUG, 2005 Awaji Isl, JAPAN, Inst. Electron. Inf. & Commun. Eng
IEICE Transactions on Electronics E89-C(7), 926—30 (2006)
[ACTI149] J. Lusakowski, W. Knap, Y. Meziani, J. -P. Cesso, A. El Fatimy, R. Tauk, N. Diakonova, G. Ghibaudo, F. Boeuf and T. Skotnicki
Electron mobility in quasi-ballistic Si MOSFETs
35th European Solid-State Device Research Conference, SEP 12-16, 2005 Grenoble, FRANCE, Elsevier
Solid-State Electronics 50(4), 632—6 (2006)
2005
[ACTI150] O. V. Polischuk, V. V. Popov, M. S. Shur and W. Knap
Excitation of gated and ungated plasmons and generation of terahertz radiation in nanometer-gate field-effect transistor
Proceedings of the CAOL 2005. 2nd International Conference on Advanced Optoelectronics and Lasers, 12-17 Sept. 2005, IEEE vol. 2, 19—22 (2005)
[ACTI151] J. Lusakowski, W. Knap, Y. Meziani, J. P. Cesso, A. El Fatimy, R. Tauk, N. Diakonova, G. Ghibaudo, F. Boeuf and T. Skotnicki
Influence of ballistic and pocket effects on electron mobility in Si MOSFETs
Proceedings of ESSDERC 2005. 31st European Solid-State Device Research Conference, 12-16 Sept. 2005, IEEE, 561—4 (2005)
[ACTI152] A. Cappy, J. -S. Galloo, S. Bollaert, Y. Roelens, J. Mateos, T. Gonzalez and W. Knap
InP based ballistic nanodevices
2005 International Conference on Indium Phosphate And Related Materials, 8-12 May 2005, IEEE, 9—12 (2005)
[ACTI153] A. Cappy, N. Widimann, S. Bolaert, X. Wallart and W. Knap
New HEMT structures for THz applications
Device Research Conference, 20-22 June 2005, IEEE, 2 pp. (2005)
[ACTI154] Y. M. Meziani, J. Lusakowski, N. Diakonova, W. Knap, D. Seliuta, E. Sirmulis, J. Devenson, G. Valusis, F. Boeuf and T. Skotnicki
Non-resonant detection of terahertz radiation by nanometer field effect transistors
The Joint 30th International Conference on Infrared and Millimeter Waves, 19-23 Sept. 2005, IEEE vol. 1, 269—70 (2005)
[ACTI155] W. Knap, J. Lusakowski, F. Teppe, N. Diakonova and Y. Meziani
Terahertz generation and detection by plasma waves in nanometer gate high electron mobility transistors
2th International Symposium on Ultrafast Phenomena in Semiconductors (12-UFPS), AUG 22-25, 2004 Vilnius, LITHUANIA
Acta Physica Polonica A 107, 82 (2005)
[ACTI156] F. Teppe, J. Lusakowski, N. Diakonova, Y. M. Meziani, W. Knap, T. Parenty, S. Bollaert, A. Cappy, V. Popov, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev and M. S. Shur
Terahertz emission and detection by plasma waves in nanoscale transistors
Physics of Semiconductors. 27th International Conference on the Physics of Semiconductors. ICPS-27, 26-30 July 2004, AIP
AIP Conference Proceedings(772), 1523—4 (2005)
[ACTI157] J. Mateos, S. Perez, D. Pardo, T. Gonzalez, J. Lusakowski, N. Diakonova, W. Knap, S. Bollaert, Y. Roelens, A. Cappy, J. F. Millithaler and L. Varani
Terahertz emission and noise spectra in HEMTs
Unsolved Problems of Noise and Fluctuations. UPoN 2005 : Fourth International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology, and High Technology, 6-10 June 2005, AIP
AIP Conference Proceedings(800), 423—30 (2005)
[ACTI158] J. -F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. Gonzdlez, S. Perez, D. Pardo, W. Knap, J. Lusakowski, N. Diakonova, S. Bollaert and A. Cappy
TeraHertz emission from nanometric HEMTs analyzed by noise spectra
Noise and Fluctuations. 18th International Conference on Noise and Fluctuations-ICNF 2005, 19-23 Sept. 2005, AIP
AIP Conference Proceedings(780), 335—8 (2005)
[ACTI159] F. Tristan, A. Solis, G. Palestino, C. Gergely and F. Cuisinier
Glucose oxidase adsorption on sequential adsorbed polyelectrolyte films studied by spectroscopic techniques
2nd Mexican Meeting on Mathematical and Experimental Physics, 2004-09-06, 2004-09-10, Mexico City, Mexique
AIP Conference Proceedings, Materials Science and Applied Physics 759, 111-120 (2005)
[ACTI160] W. Knap, C. Skierbiszewski, K. Dybko, J. Lusakowski, M. Siekacz, I. Grzegory and S. Porowski
Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures
International Workshop on Bulk Nitride Semiconductors III, SEP 04-09, 2004 Zakopane, POLAND, Elsevier
Journal of Crystal Growth 281(1), 194—201 (2005)
[ACTI161] N. Diakonova, S. L. Rumyantsev, M. S. Shur, Y. Meziani, F. Pascal, A. Hoffmann, Q. Fareed, X. Hu, Yu. Bilenko, R. Gaska and W. Knap
High magnetic field studies of 1/f noise in GaN/AlGaN heterostructure field effect transistors
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi A 202(4), 677—9 (2005)
[ACTI162] J. Lusakowski, F. Teppe, N. Diakonova, Y. M. Meziani, W. Knap, T. Parenty, S. Bollaert, A. Cappy, V. Popov and M. S. Shur
Terahertz generation by plasma waves in nanometer gate high electron mobility transistors
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi A 202(4), 656—9 (2005)
[ACTI163] M. Siekacz, K. Dybko, C. Skierbiszewski, W. Knap, Z. Wasilewski, D. Maude, J. Lusakowski, W. Krupczynski, G. Nowak, M. Bockowski and S. Porowski
High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN
7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi C(4), 1355—9 (2005)
[ACTI164] F. Teppe, Y. M. Meziani, N. Diakonova, J. Lusakowski, F. Boeuf, T. Skotnicki, D. Maude, S. Rumyantsev, M. S. Shur and W. Knap
Terahertz detectors based on plasma oscillations in nanometric silicon field effect transistors
7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi C(4), 1413—17 (2005)
AFF : Communications par affiche dans un congrès international ou national - Non peer reviewed poster presentations in international or national conferences.
2008
[AFF42] J. Dao, E. Estephan, C. Gergely, C. Larroque and F. Cuisinier
12-Mer peptides for functionalization of Ti6Al4V
Pan European Federation of the International Association for Dental Research, 2008, Londre, Royaume-Uni (2008)
[AFF43] C. Taleb Bendiab, E. Estephan, D. Deville De Périère, C. Gergely and F. Cuisinier
Amélioration des nanocomposites inorganiques-organique par l’utilisation d’une phosphoprotéine
Journées odontologiques internationales de Montpellier, 2008, Montpellier, France (2008)
[AFF44] C. Hirtz, E. Estephan, J. Dao, C. Larroque, C. Gergely, D. Deville De Périère and F. Cuisinier
Apport de la spectrométrie de masse dans l’étude de mécanismes d’adhésion de peptide sur les alliages de titane
Société Francophone des Biomatériaux Dentaires (SFBD), 2008, Nice, France (2008)
[AFF45] C. Taleb Bendiab, E. Estephan, D. Deville De Périère, C. Gergely and F. Cuisinier
Improvement of inorganic-organic nanocomposite coatings using phosphorylated protein
Pan European Federation of the International Association for Dental Research, 2008, Londres, Royaume-Uni (2008)
[AFF46] M. Martin, G. Palestino, T. Cloitre, R. Legros, L. Zimanyi and C. Gergely
Light enhancement detection of biomolecules adsorbed on porous silicon microcavities : a multiphoton microscopy study
Women in Photonics School on Photonic Metamaterials, 2008, Paris, France (2008)
[AFF47] M. Martin, G. Palestino, V. Agarwal, C. Gergely, L. Zimanyi and T. Cloitre
Optical study of proteins infiltrated porous silicon microcavities
European Optical Society Meeting, 2008, Paris, France (2008)
[AFF48] E. Estephan, C. Larroque, F. Cuisinier and C. Gergely
Specific Functionalization of InP for biosensing application
European Optical Society Meeting, 2008, Paris, France (2008)
[AFF49] J. Dao, E. Estephan, C. Gergely, C. Larroque and F. Cuisinier
Specific peptides for GaN and Ti6Al4V functionalization
Journées odontologiques internationales de Montpellier, 2008, Montpellier, France (2008)
2007
[AFF50] C. Gergely, G. Palestino, V. Agarwal, E. Perez and F. Cuisinier
Functionalized porous silicon based glucose sensor
IADR meeting, 2007, Thessaloniki, Grèce (2007)
[AFF51] I. Pelsoczi, K. Ungvari, H. Polyanka, Z. Toth, B. Hopp, C. Gergely, Z. Rakonczay, F. Cuisinier, A. Fazekas and K. Turzo
Human fibroblast cell culturing on surface modified titanium implants
IADR meeting, 2007, Thessaloniki, Grèce (2007)
2005
[AFF52] C. Gergely, J. Moradian-Oldak and F. Cuisinier
Adsorption of amelogenin nanospheres onto charged surfaces
Enamel VII meeting, 2005, Brewster, états-Unis d’Amérique (2005)
[AFF53] C. Gergely, J. Moradian-Oldak and F. Cuisinier
Adsorption of amelogenin nanospheres onto charged surfaces, towards understanding their auto-assembly
International Biophysical Congress, 2005, Montpellier, France (2005)
[AFF54] I. Pelsoczi, K. Turzo, C. Gergely, A. Fazekas and F. Cuisinier
Biofunctionalisation of Ti surfaces by means of self-assembled polypeptide films
IADR meeting, 2005, Amsterdam, Pays-Bas (2005)
[AFF55] H. Flores, J. Menchaca, F. Tristan, C. Gergely, E. Perez and F. Cuisinier
Polyelectrolyte nanorings
International Biophysical Congress, 2005, Montpellier, France (2005)
AP : Autres productions : thèses - Other productions : thesis.
2009
[AP22] E. Estephan
Biofonctionnalisation de semiconducteurs par l’intermédiaire de peptides extraits par la technologie "phage display"_ [Application à la biodétection avec des structures artificielles
Thèse d’Université 22/06/2009, Université Montpellier 2 (Directrice de thèse : C. Gergely)
2008
[AP23] G. Palestino
Biosensing and light enhancement by means of biofunctionalized porous silicon devices
Thèse d’Université 11/07/2008, Université Montpellier 2 (Directrice de thèse : C. Gergely)
[AP24] S. Boubanga-Tombet
Modes plasmoniques dans les transistors à effet de champ et détection THz
Thèse d’Université 17/11/2008, Université Montpellier 2 (Directrice de thèse : D. Coquillat)
2007
[AP25] A. El Fatimy
Détection et émission Terahertz par les ondes de plasma dans des transistors HEMT à base d’hétérostructures GaN/AlGaN et InGaAs/InAlAs
Thèse d’Université 15/06/2007, Université Montpellier 2 (Directeur de thèse : W. Knap)
[AP26] R. Tauk
Mobilité électronique et détection Terahertz dans les transistors ultimes
Thèse d’Université 15/06/2007, Université Montpellier 2 (Directeur de thèse : W. Knap)
2005
[AP27] H. Sere
Etude de l’épitaxie par CVD du carbone de silicium
Thèse d’Université 21/07/2005, Université Montpellier 2 (Directeur de thèse : R. Aulombard)
AP : Autres productions : brevets - Other productions : patents.
2009
[AP28] H. Roskos, A. Lisauskas, T. Löffler, W. Knap, M. Dyakonov, F. Teppe and D. Coquillat
2D_ [und 3D-Bildgebung mit THz-Strahlung
10 2008 047 103.8, 2009-01-01 (2009)
| Publications inter-équipes |
ACL : Articles dans des revues internationales ou nationales avec comité de lecture répertoriées par l’AERES ou dans les bases de données internationales (ISI Web of Knowledge, Pub Med...)International or National peer-reviewed articles in journals referenced in international databases.
2009
[ACL243] M. Moret, S. Ruffenach, O. Briot and B. Gil
Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties
European Physical Journal Applied Physics 45(2), 20305 (2009)
[ACL244] C. Consejo, O. Thevenot, L. Lahousse, F. Piquemal and J. David
Improvements of the Measurement Chain for the Determination of the von Klitzing Constant
IEEE Transactions on Instrumentation and Measurement 58(4), 902 (2009)
[ACL245] O. Briot, B. Gil and P. Bigenwald
The Reduction of Elastic Energy Density in InN Growth on (hkl)-Oriented Planes
Japanese Journal of Applied Physics 48, 051002 (2009)
2008
[ACL246] X. Sallenave, O. Dautel, G. Wantz, P. Valvin, J. Lère-Porte and J. Moreau
Tuning and Transcription of the Supramolecular Organization of a Fluorescent Silsesquioxane Precursor into Silica-Based Materials through Direct Photochemical Hydrolysis-Polycondensation and Micropatterning
Advanced Functional Materials 18, 1-7 (2008)
[ACL247] D. Coquillat, M. Le Vassor d’Yerville, M. Kazan, C. Liu, I. Watson, P. Edwards, R. Martin, H. Chong and R. De La Rue
Studies of the photonic and optical-frequency phonon properties of arrays of selectively grown GaN micro-pyramids
Journal of Applied Physics 103, 044910 (2008)
[ACL248] B. Gil, P. Bigenwald and O. Briot
Polarization fields in wurtzite strained layers grown on (hkl) planes
Superlattices and Microstructures 44(3), 291—301 (2008)
2007
[ACL249] S. Ruffenach, O. Briot, M. Moret and B. Gil
Control of InN quantum dot density using rare gases in metal organic vapor phase epitaxy
Applied Physics Letters 90(15), 153102—1 (2007)
[ACL250] R. Tauk, J. Lusakowski, W. Knap, A. Tiberj, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf and T. Skotnicki
Low electron mobility of field-effect transistor determined by modulated magnetoresistance
Journal of Applied Physics 102(10), 103701—1 (2007)
[ACL251] S. Bouchoule, S. Boubanga-Tombet, L. Le Gratiet, M. Le Vassor d’Yerville, J. Torres, Y. Chen and D. Coquillat
Reactive ion etching of high optical quality GaN/sapphire photonic crystal slab using CH4-H2 chemistry
Journal of Applied Physics 101, 043103 (2007)
[ACL252] B. Gil, P. Bigenwald and O. Briot
An evaluation of the growth of nitrides on semipolar substrates using two indicators
Physica Status Solidi-Rapid Research Letters 1(6), 268 (2007)
2006
[ACL253] F. Teppe, M. Orlov, A. El Fatimy, A. Tiberj, W. Knap, J. Torres, V. Gavrilenko, A. Shchepetov, Y. Roelens and S. Bollaert
Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors
Applied Physics Letters 89(22), 222109—1 (2006)
[ACL254] M. Sakowicz, R. Tauk, J. Lusakowski, A. Tiberj, W. Knap, Z. Bougrioua, M. Azize, P. Lorenzini, K. Karpierz and M. Grynberg
Low temperature electron mobility and concentration under the gate of AlGaN/GaN field effect transistors
Journal of Applied Physics 100(11), 113726—1 (2006)
[ACL255] C. Pinquier, F. Demangeot, J. Frandon, J. -C. Chervin, A. Polian, B. Couzinet, P. Munsch, O. Briot, S. Ruffenach, B. Gil and B. Maleyre
Raman scattering study of wurtzite and rocksalt InN under high pressure
Physical Review B 73(11), 115211—1 (2006)
2005
[ACL256] D. Coquillat, G. Vecchi, C. Comaschi, A. Marco Malvezzi, J. Torres and M. Le Vassor d’Yerville
Enhanced second_ [and third-harmonic generation and induced photoluminescence in two-dimensional GaN photonic crystal
Applied Physics Letters 87, 101106 (2005)
[ACL257] P. Lorenzini, Z. Bougrioua, A. Tiberj, R. Tauk, M. Azize, M. Sakowicz, K. Karpierz and W. Knap
Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN/GaN heterostructures
Applied Physics Letters 87(23), 232107—1 (2005)
[ACL258] R. Intartaglia, B. Maleyre, S. Ruffenach, O. Briot, T. Taliercio and B. Gil
Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition
Applied Physics Letters 86(14), 142104—1 (2005)
[ACL259] R. Intartaglia, B. Maleyre, S. Ruffenach, O. Briot, T. Taliercio and B. Gil
Response to "Comment on `Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition’" Appl. Phys. Lett. 87, 176101 (2005)
Applied Physics Letters 87(17), 176102—1 (2005)
[ACL260] S. Anceau, P. Lefebvre, T. Suski, L. Konczewicz, H. Hirayama and Y. Aoyagi
Enhancement of localization and confinement effects in quaternary group-III nitride multiquantum wells on SiC substrate
Physica Status Solidi A 202(4), 642—6 (2005)
[ACL261] F. Demangeot, C. Pinquier, J. Frandon, M. Gaio, O. Briot, B. Maleyre, S. Ruffenach and B. Gil
Raman scattering by the longitudinal optical phonon in InN : wave-vector nonconserving mechanisms
Physical Review B 71(10), 104305—1 (2005)
[ACL262] J. Torres, M. Le Vassor d’Yerville, D. Coquillat, E. Centeno and J. -P. Albert
Ultraviolet surface-emitted second-harmonic generation in GaN one-dimensional photonic crystal slabs
Physical Review B 71(19), 195326—1 (2005)
ACLN : Articles dans des revues avec comité de lecture non répertoriées dans des bases de données internationales International or National peer-reviewed articles in journals not referenced in international databases.
2006
|
ACLN11] L. Andral, A. Sabir, F. Soulier, C. Chaubet, M. Nogues, F. Henn, F. Geniet, F. Terki and D. Theret
L’option sciences un atout pour le dialogue entre disciplines
Repères IREM 65, 91-103 (2006)
INV : Conférences données à l’invitation du Comité d’organisation dans un congrès national ou international _ [Invited talks in International or National conferences.
2009
[INV57] O. Briot, S. Ruffenach, M. Moret, B. Gil, C. Giesen, M. Heuken, S. Rushworth, L. T. and M. Succi
Growth of InN films and nanostructures by MOVPE
2nd International Symposium on Growth of III-Nitride (ISGN-2), 2008-07-06, 2008-07-09, 2008, Laforet Shuzenji, Izu, Japon, Elsevier
Journal of Crystal Growth 311, 2761 (2009)
2008
[INV58] D. Coquillat, M. Le Vassor d’Yerville, P. Arcade, M. Kazan, C. Liu, I. M. Watson, P. R. Edwards, R. Martin, H. Chong and R. De La Rue
Arrays of selectively grown GaN micro-pyramids : photonic and optical-frequency phonon properties
Photonic Crystal Materials and Devices VIII, 2008, 2008, France, Richard M. De La Rue, Ceferino López, Michele Midrio, Pierre Viktorovitch 6989, 69890J (2008)
2007
[INV59] F. Teppe, A. El Fatimy, R. Tauk, W. Knap, D. Seliuta and G. Valusis
Terahertz Resonant Detection by Plasma Waves in Nanometric Transistors
13th International Symposium ULTRAFAST PHENOMENA IN SEMICONDUCTORS, 2008, Vilnius, Lituanie, Steponas A·smontas (2007)
2005
[INV60] J. Torres, M. Le Vassor d’Yerville, D. Cassagne, R. Legros, J. -P. Lascaray, E. Centeno, J. -P. Albert and D. Coquillat
Enhancement of Second Harmonic Generation in One-Dimensional and Two-Dimensional GaN-based Photonic Crystals
2004 MRS Fall Meeting, 2005, 2005, Boston, MA, états-Unis d’Amérique 831, E7.1 (2005)
[INV61] O. Briot, S. Ruffenach and B. Gil
Growth and properties of indium nitride thin films and InN nanostructures
2005 IEEE LEOS Annual Meeting, 22-28 Oct. 2005, IEEE, 856—7 (2005)
[INV62] O. Briot, S. Ruffenach and B. Gil
Growth Studies and Nanoscale Strain Profiles of InN Quantum Dots
MRS Fall Meeting, Symposium FF, 2005-11-28, 2005-12-02, Boston, états-Unis d’Amérique (2005)
[INV63] D. Coquillat, M. Le Vassor d’Yerville, J. Torres, E. Centeno, D. Cassagne and J. -P. Albert
Photonic crystal basic properties and applications in nitrides
Physics of Nitride based nanostructured light-emitting devices, 2005-11-04, 2005-11-05, Bederkesa, Allemagne (2005)
ACTI : Communications avec actes dans un congrès international - Peer reviewed proceedings in international conferences.
2009
[ACTI165] S. Ruffenach, M. Moret, O. Briot, B. Gil, C. Giesen, M. Heuken, S. Rushworth, T. Leese and M. Succi
Alternative precursors for MOVPE growth of InN and GaN at low temperature
2nd International Symposium on the growth of III-NItrides (ISGN-2), 2008-07-06, 2008-07-09, 2008
Journal of Crystal Growth 311, 2791 (2009)
[ACTI166] B. Gil, O. Briot, M. Moret, S. Ruffenach, C. Giesen, M. Heuken, S. Rushworth, T. Leese and M. Succi
InN excitonic deformation potentials determined experimentally
2nd International Symposium on Growth of III-Nitrides (ISGN-2), 2008-07-06, 2008-07-09, 2008
Journal of Crystal Growth 311, 2798 (2009)
[ACTI167] O. Briot, S. Ruffenach, M. Moret, B. Gil, C. Giesen, M. Heuken, S. Rushworth, T. Leese and M. Succi
MOVPE growth of InN buffer layers on sapphire
2nd International Symposium on the gGrowth of III-Nitrides, 2008-07-06, 2008-07-09, 2008
Journal of Crystal Growth 311, 2787 (2009)
[ACTI168] M. Moret, B. Gil, S. Ruffenach, O. Briot, C. Giesen, M. Heuken, S. Rushworth, L. T. and M. Succi
Optical, structural investigations and band-gap bowing parameter of GaInN alloys
2nd International Symposium on Growth of III-Nitride (ISGN-2), 2008-07-06, 2008-07-09, 2008
Journal of Crystal Growth 311, 2795 (2009)
2008
[ACTI169] O. Thevenot, L. Lahousse, C. Consejo, J. David, S. Leleu and F. Piquemal
Toward a determination of RK in term of the new LNE calculable cross capacitor
Simposio de Metrologia 2008, 2008-10-22, 2008-10-24, Santiago de Querétaro, Mexique, 1142-1 (2008)
[ACTI170] F. Teppe, A. El Fatimy, S. Boubanga-Tombet, W. Knap, D. Seliuta, G. Valusis and B. Chenaud
Terahertz Resonant Detection by Plasma Waves in Nanometric Transistors
13th International Symposium on Ultrafast Phenomena in Semiconductors, AUG 26-29, 2007 Vilnius, LITHUANIA
Acta Physica Polonica A 113, 815 (2008)
2007
[ACTI171] M. Sakowicz, J. Lusakowski, K. Karpierz, M. Grynberg, B. Majkusiak, R. Tauk, A. Tiberj, W. Knap, Z. Bougrioua, M. Azize, P. Lorenzini, F. Boeuf and T. Skotnicki
Electron mobility and concentration on submicrometer scale _ [ investigation of Si and AlGaN/GaN field effect transistors by AC magnetoresistance method
Physics of Semiconductors, 28th International Conference, 24-28 July 2006, AIP
AIP Conference Proceedings 893, 1379—80 (2007)
[ACTI172] T. Inushima, D. K. Maude, N. Kato, Hai Lu, W. J. Schaff, R. Tauk, Y. Meziani, S. Ruffenach, O. Briot, W. Knap, B. Gil, H. Miwa, A. Yamamoto, D. Muto and Y. Nanishi
Superconductivity of InN as an intrinsic property
Physics of Semiconductors, 28th International Conference, 24-28 July 2006, AIP
AIP Conference Proceedings 893, 137—8 (2007)
[ACTI173] S. Juillaguet, T. Guillet, R. Bardoux, J. Camassel and T. Chassagne
Electric-field screening effects in the micro-photoluminescence spectra of as-grown stacking faults in 4H-SiC
6th European Conference on Silicon Carbide and Related Materials, SEP, 2006 Newcastle upon Tyne, ENGLAND, Trans Tech Publications Ltd.
Materials Science Forum 556-557, 351—4 (2007)
[ACTI174] R. Tauk, A. Tiberj, P. Lorenzini, Z. Bougrioua, M. Azize, M. Sakowicz, K. Karpierz and W. Knap
Magnetotransport characterization of AlGaN/GaN interfaces
2nd International Workshop on Modulation Spectroscopy of Semiconductor Structures, JUN 29-JUL 01, 2006 Wroclaw, POLAND, Wiley-VCH
Physica Status Solidi A 204(2), 586—90 (2007)
[ACTI175] R. Kribich, S. Gatti, J. Jabbour, G. Pille, S. Etienne-Calas, T. Mazingue, P. Etienne, R. Legros and Y. Moreau
Photonic circuits writing with UV pulsed laser
6th International Symposium on Blue Laser and Light Emitting Diodes Montpellier, FRANCE, MAY 15-19, 2006
Physica Status Solidi C 4(1), 104-107 (2007)
[ACTI176] D. Coquillat, M. Le Vassor d’Yerville, S. Boubanga-Tombet, C. Liu, K. Bejtka, I. Watson, P. Edwards, R. Martin, H. Chong and R. De La Rue
Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids
6th International Symposium on Blue Laser and Light Emitting Diodes Montpellier, FRANCE, MAY 15-19, 2006
Physica Status Solidi C 4(1), 95 (2007)
2006
[ACTI177] T. Inushima, N. Kato, D. K. Maude, H. Lu, W. J. Schaff, R. Tauk, Y. Meziani, S. Ruffenach, O. Briot, W. Knap, B. Gil, H. Miwa, A. Yamamoto, D. Muto, Y. Nanishi, M. Higashiwaki and T. Matsui
Superconductivity of InN with a well defined Fermi surface
6th International Conference on Nitride Semiconductors (ICNS-6), AUG 28-SEP 02, 2005 Bremen, GERMANY, Wiley-VCH
Physica Status Solidi B 243(7), 1679—86 (2006)
[ACTI178] M. Vladimirova, F. Teppe, D. Scalbert, C. Misbah, T. Wojtowicz and J. Kossut
Spontaneous magnetization patterning in diluted paramagnetic semiconductors : theory and experiment
Ultrafast Phenomena in Semiconductors and Nanostructure X, 23 Jan. 2006, SPIE _ [The International Society for Optical Engineering
Proceedings of the SPIE _ [The International Society for Optical Engineering 6118, 611802—1 (2006)
2005
[ACTI179] D. Coquillat and M. Le Vassor d’Yerville
Enhanced third-harmonic generation and three-photon induced photoluminescence in a GaN photonic crystal
Advances in Nanophotonics, 2005, 2005, Heraklion, Grèce, NL (2005)
[ACTI180] C. Pinquier, F. Demangeot, J. Frandon, M. Gaio, O. Briot, B. Maleyre, S. Ruffenach and B. Gil
Mechanisms of Raman scattering in doped indium nitride
GaN, AlN, InN and Their Alloys. Symposium, 29 Nov.-3 Dec. 2004, Materials Research Society, 291—6 (2005)
[ACTI181] M. Ghali, J. Kossut, E. Janik, F. Teppe, M. Vladimirova and D. Scalbert
Spin precession in a model structure for spintronics
Physics of Semiconductors. 27th International Conference on the Physics of Semiconductors. ICPS-27, 26-30 July 2004, AIP
AIP Conference Proceedings(772), 1383—4 (2005)
[ACTI182] J. Torres, M. Le Vassor d’Yerville, D. Cassagne, R. Legros, J. -P. Lascaray, E. Centeno, J. -P. Albert and D. Coquillat
Resonantly enhanced second harmonic generation in a one-dimensional GaN-based photonic crystal slab
GaN, AlN, InN and Their Alloys. Symposium, 29 Nov.-3 Dec. 2004, Materials Research Society
Materials Research Society Symposium Proceedings Vol.831, 369—77 (2005)
[ACTI183] D. Coquillat, J. Torres, M. Le Vassor d’Yerville, R. Legros, J. -P. Lascaray, C. Liu, I. M. Watson, R. W. Martin, H. M. H. Chong and R. M. De La Rue
Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi A 202(4), 652—5 (2005)
[ACTI184] Y. M. Meziani, B. Maleyre, M. L. Sadowski, S. Ruffenach, O. Briot and W. Knap
Terahertz investigation of high quality indium nitride epitaxial layers
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi A 202(4), 590—2 (2005)
[ACTI185] S. Ruffenach, B. Maleyre, O. Briot and B. Gil
Growth of InN quantum dots by MOVPE
Fourth International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN4), 29 June-3 July 2004, Wiley-VCH
Physica Status Solidi C(2), 826—32 (2005)
[ACTI186] B. Maleyre, S. Ruffenach, O. Briot, B. Gil and A. van der Lee
Investigation of the influence of buffer and nitrided layers on the initial stages of InN growth on sapphire by MOCVD
International Workshop on Nitride Semiconductors (IWN 2004), 19-23 July 2004, Wiley-VCH
Physica Status Solidi C(7), 2309—15 (2005)
[ACTI187] B. Maleyre, O. Briot, S. Ruffenach and B. Gil
Optical investigations on Si-doped InN films
7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, 1-4 June 2004, Wiley-VCH
Physica Status Solidi C(4), 1379—83 (2005)
AFF : Communications par affiche dans un congrès international ou national - Non peer reviewed poster presentations in international or national conferences.
2009
[AFF56] C. Desfours, S. Etienne-Calas, C. Gergely, P. Etienne, F. Cuisinier and R. Horwath
Optical waveguides for biomolecules detection
Hybrid Materials, 2009-03, Tours, France (2009)
2008
[AFF57] C. Desfours, S. Etienne-Calas, C. Gergely and P. Etienne
Capteurs optiques appliqués à la détection de biomolécules
7ème journée Sol-Gel Rhône-Alpes, 2008-12, Villeurbanne, France (2008)
[AFF58] C. Consejo, O. Thevenot, L. Lahousse and J. David
Toward a determination of R-K at LNE with a new Thompson-Lampard calculable capacitor
Conference on precision electromagnetic measurements, 2008-06-08, 2008-06-13, Broomfield, France (2008)
2007
[AFF59] O. Thevenot, C. Consejo, A. Bounouh, J. David, M. Cuq and P. Noiré
A new apparatus for cylindricity measurement with uncertainty less than 25 nm
European Society for Precision Engineering and Nanotechnology, 2007, 2007, Bremen, Allemagne (2007)
2006
[AFF60] O. Thevenot, C. Consejo, A. Bounouh, J. Lacueille, J. David, P. Noiré, M. Cuq, G. Diolez and T. Roux
Application of the dissociated metrological structure for the cylindricity measurement of calculable cross-capacitor electrodes
Conference on precision electromagnetic measurements, 2006, Turin, Italie (2006)
2005
[AFF61] J. Torres, M. Le Vassor d’Yerville, D. Cassagne, R. Legros, J. -P. Lascaray, E. Centeno, J. -P. Albert and D. Coquillat
Resonantly enhanced second harmonic generation in GaN-based photonic crystal slabs
PECS-VI : International Symposium on Photonic and Electromagnetic Crystal Structures, 2005, 2005, Aghia Pelaghia, Crete, Grèce, PECSVI/PECSVIAbstracts3/cassagne (2005)
AP : Autres productions : bases de données, logiciels enregistrés, traductions, comptes rendus d’ouvrages, rapports de fouilles, guides techniques, catalogues d’exposition, rapports intermédiaires de grands projets internationaux, etc. - Other productions : databases, softwares, translations, ....
2006
[AP29] E. Giraud, G. Vasileiadis, P. Valvin and I. Toledo
Preliminary results on the Extinction and Night Sky Background in UBV on La Silla and ALMA site
http://fr.arXiv.org/abs/astro-ph/0611262 (2006)
AP : Autres productions : brevets - Other productions : patents.
2008
[AP30] B. Gil, O. Briot, S. Ruffenach, B. Maleyre, T. Cloitre and R. Aulombard
Indium Nitride Layer production
JP2008513327, 2008-05-01 (2008)
[AP31] S. Ruffenach, O. Briot and B. Gil
Method for the growth of Indium nitride
WO2008009805, 2008-01-24 (2008)
[AP32] S. Ruffenach, O. Briot and B. Gil
Nouveau Procédé pour la croissance de nitrures d’éléments du groupe IIIb
FR2904008, 2008-01-25 (2008)
2007
[AP33] B. Gil, O. Briot, S. Ruffenach, B. Maleyre, T. Cloitre and R. Aulombard
Indium Nitride Layer production
EP1799886, 2007-06-27 (2007)
[AP34] B. Gil, O. Briot, S. Ruffenach, B. Maleyre, T. Cloitre and R. Aulombard
Indium Nitride Layer production
US2007269965, 2007-11-22 (2007)
2006
[AP35] B. Gil, O. Briot, S. Ruffenach, B. Maleyre, T. Cloitre and R. Aulombard
Indium Nitride Layer production
WO2006032756, 2006-03-30 (2006)
[AP36] O. Briot, B. Gil and S. Ruffenach
Method to manufacture Indium Nitride quantum dots
EP1658394, 2006-05-24 (2006)
[AP37] B. Gil, O. Briot, S. Ruffenach, B. Maleyre, T. Cloitre and R. Aulombard
Réalisation d’une couche de nitrure d’indium
FR2875333, 2006-03-17 (2006)
2005
[AP38] O. Briot, B. Gil and S. Ruffenach
Method to manufacture Indium Nitride quantum dots
AU2003274409, 2005-04-07 (2005)
[AP39] O. Briot, B. Gil and S. Ruffenach
Method to manufacture Indium Nitride quantum dots
US2005028726, 2005-02-10 (2005)
[AP40] O. Briot, B. Gil and S. Ruffenach
Method to manufacture Indium Nitride quantum dots
WO2005014897, 2005-02-17 (2005)
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